Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects

Chen, Boyang; Mu, Wenxiang; Liu, Yiyuan; Wang, Pei; Ma, Xu; Zhang, Jin; Dong, Xuyang; Li, Yang; Jia, Zhitai; Tao, Xiaofeng

doi:10.1039/d3ce00052d

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2024

Publication Types

Select...

Article4

Preprint1

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

The study of (1¯01) plane in β-Ga2O3 crystal

Bu,

Yang,

Wei

et al. 2024

Applied Surface Science

View full text Add to dashboard Cite

The study of (1¯01) plane in β-Ga2O3 crystal

Bu,

Yang,

Wei

et al. 2024

Applied Surface Science

View full text Add to dashboard Cite

Self-powered photodetector with low dark current based on the InSe/β-Ga₂O₃ heterojunctions

Wang,

Zhao,

Xiao

et al. 2024

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Yao,

Sugawara,

Sasaki

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

Load-dependent and angle-dependent nanoindentation tests were performed on a (2¯01)-oriented single-crystal β-Ga2O3 substrate to study the mechanical properties of the material. The anisotropy of the mechanical properties was examined, especially with regard to the dependence of the elastic modulus (E), hardness (H), and form of plastic deformation on the rotation angle of a Berkovich indenter with respect to the monoclinic structure. E reached a maximum value and H a minimum value when the sample was rotated to such an angle that one of the three facets of the Berkovich indenter was parallel to the [010] direction. To compare our experimental results with the theoretical calculation based on the monoclinic structure, the elastic surface of β-Ga2O3 was calculated using fourth-rank stiffness and compliance tensors and visualized in three-dimensional space. Two-dimensional sectional maps of the elastic surface were obtained for a range of crystal planes, and good agreement was obtained between the experimental observations and calculations. Plastic deformation at the indenter impressions was evaluated using scanning and transmission electron microscopy, and dislocations, cleavage, and cracks were observed. Their structure and density depended on the rotation angle. Our results clearly show a strong anisotropy of the mechanical properties of β-Ga2O3, which is very different from what is found in other compound semiconductors for power-device applications, such as GaN and 4H-SiC. This emphasizes the importance of customizing the machining process for β-Ga2O3, rather than simply using “machining recipes” for other materials.

show abstract

Growth and characterization of the β-Ga₂O₃ (011) plane without line-shaped defects

Abstract: A kind of dislocations occurring on the surface of β-Ga2O3 (001) substrate and line-shaped defects caused by these dislocations in the epitaxial layer are responsible for reverse leakage current and...

Cited by 5 publications

References 36 publications

The study of (1¯01) plane in β-Ga2O3 crystal

The study of (1¯01) plane in β-Ga2O3 crystal

Self-powered photodetector with low dark current based on the InSe/β-Ga₂O₃ heterojunctions

Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Contact Info

Product

Resources

About

Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects

Abstract: A kind of dislocations occurring on the surface of β-Ga2O3 (001) substrate and line-shaped defects caused by these dislocations in the epitaxial layer are responsible for reverse leakage current and...

Cited by 5 publications

References 36 publications

The study of (1¯01) plane in β-Ga2O3 crystal

The study of (1¯01) plane in β-Ga2O3 crystal

Self-powered photodetector with low dark current based on the InSe/β-Ga2O3 heterojunctions

Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Contact Info

Product

Resources

About

Growth and characterization of the β-Ga₂O₃ (011) plane without line-shaped defects

Self-powered photodetector with low dark current based on the InSe/β-Ga₂O₃ heterojunctions