Growth and characterization of Ta2O5 thin films on Si by ion beam sputter deposition

Ta2O5/SiO2 multilayered thin film on Si as a proposed new reference material for SIMS depth profiling

“…Generally, the chemical state analysis of oxides of heavy metallic elements is very difficult because they are reduced by preferential sputtering of the light oxygen atoms during the precleaning process in order to eliminate the surface contaminant layer by argon ion beam sputtering.6,17h21 Tantalum oxide is one of the typical materials reduced by argon ion beam sputtering and therefore it must be analysed without sputtering.17 Even though the in depth chemical state analysis of the tantalum oxide thin Ðlm has been reported to be possible using an oxygen ion beam for sputtering, in situ XPS analysis will give a better result. 15 In this study, in situ XPS analysis makes it possible to study the change of the chemical state of the Ðlm surface grown in the deposition chamber. Figure 3 shows the change of the chemical state of the tantalum oxide Ðlm as a function of the oxygen partial pressure.…”

Processing and Characterization of Ta2O5 Films Deposited by Pulsed Laser Ablation

“…The properties of Ta 2 O 5 films, however, have been demonstrated to be strongly dependent on the deposition method, the nature of substrate, and the postdeposition annealing treatment. For the fabrication of thin films of Ta 2 O 5 , there are many deposition techniques currently in use, for example, lowpressure metal organic chemical vapor deposition (LP-MOCVD), [8] plasma-enhanced CVD, [9] UV photochemical CVD, [10] magnetron sputtering, [11] ion sputtering, [12] metal organic solution deposition (MOSD), [13] sol-gel deposition, [14] as well as laser ablation deposition (LAD, also known as pulsed laser deposition, PLD). [15] Among these techniques, CVD techniques have been most commonly employed for the growth of Ta 2 O 5 thin films.…”