Growth and characterization of RF-sputtered ZnS thin film deposited at various substrate temperatures for photovoltaic application

Chelvanathan, Puvaneswaran; Yusoff, Yulisa; Haque, Fozia Z.; Akhtaruzzaman, Md.; Alam, Manawwer; ALOthman, Zeid A.; Rashid, Mohammad Junaebur; Sopian, Kamaruzzaman; Amin, Nowshad

doi:10.1016/j.apsusc.2014.08.155

Cited by 92 publications

(22 citation statements)

References 15 publications

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“…It has potential applications in optoelectronic devices [1] such as IR windows, photocatalytic degradation, bio-medical imaging and dilute magnetic semiconductors as [2,3], their wide-band-gap of 3.7 eV [4] could decrease the window absorption losses and improve the short-circuit current of the cells. To fabricate high quality ZnS thin films, various growth techniques have been used such as sol-gel [5], radio frequency magnetron sputtering [6], molecular beam epitaxy [7], spray pyrolysis [8], chemical vapor deposition [9], reverse micelle method [10], wet chemical route [11], microwave heating technique [12], hydrothermal technique [13] and chemical bath deposition (CBD) [14].…”

Section: Introductionmentioning

confidence: 99%

Effects of Al content on physical properties of ZnS thin films prepared by chemical bath deposition

Jrad

Nasr

Turki-Kamoun

2015

J Mater Sci: Mater Electron

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In this work we report the effect of aluminum on the physical properties of Al-doped ZnS thin films. Our samples have been synthesized by chemical bath deposition from aqueous solutions (Sahraei and Darafarin in Spectrochim Acta A Mol Biomol Spectrosc 149:941-948, 2015). X-ray diffraction analysis revealed that the films are monocrystalline and showed (111) preferred orientation for all the doping concentration. Doping ZnS thin films shows significant changes in the transmittance characteristics in the visible range. The refractive index dispersion and extinction coefficients are adequately described by the Wemple-DiDomenico model. The value of oscillator energy E 0 , dispersion energy E d , the high-frequency dielectric constant e ? and ratio of the carrier concentration to the effective mass N/m* were estimated according to the models of Wemple-DiDomenico and Spitzer-Fan. Photoluminescence behavior of Al-doped ZnS thin films was also studied.

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Section: Introductionmentioning

confidence: 99%

Effects of Al content on physical properties of ZnS thin films prepared by chemical bath deposition

Jrad

Nasr

Turki-Kamoun

2015

J Mater Sci: Mater Electron

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“…]/[Zn 2? ]) varied in the range (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) at.% with a step of 6 at.%.…”

Section: Experimental Details 21 Materialsmentioning

confidence: 99%

“…ZnS compound is a promoting candidate for a large variety of applications including photonic crystal sensors [3], optical filters [4], light-emitting diodes [5], anti-reflection coatings [6], electroluminescent devices [7], flat panel displays, phosphors [8] and photovoltaic cells [5]. Various synthetic methods have been employed to synthesize ZnS thin films, such as metal organic chemical vapor deposition (MOCVD) [9], sol-gel deposition [10], radio frequency (RF) magnetron sputtering [11], thermionic vacuum arc [12], molecular beam epitaxy (MBE) [13], pulsed laser deposition (PLD) [14], successive ionic layer adsorption and reaction (SILAR) [15] and chemical bath deposition (CBD) [16]. Among these techniques, CBD is a convenient technique for producing large area thin films semiconducting materials [16].…”

Section: Introductionmentioning

confidence: 99%

Effect of copper concentration on the physical properties of ZnS:Cu alloys prepared by chemical bath deposition

Jrad

Naffouti

Nefzi

et al. 2016

J Mater Sci: Mater Electron

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ZnS:Cu thin films were deposited on glass substrates by chemical bath deposition technique. The structural, morphological, optical and electrical properties of the grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectrometry, scanning electron microscopy, spectrophotometry, spectrofluorimetry and Hall effect measurements. Both XRD and Raman analysis indicated the coexistence of both sphalerite ZnS and covellite CuS with cubic and hexagonal structures, respectively. The optical band gap of the films increased from 3.70 to 3.75 eV with Cu concentration increment. Photoluminescence studies revealed that the incorporation of Cu 2? ions in ZnS matrix blue shifted and quenched the emission bands. Electric resistivity, volume carrier concentration, surface carrier concentration and Hall mobility were determined from Hall effect measurements. Indeed, for pure sample, the obtained values were about 7.586 9 10 4 X cm, 1.472 9 10 11 cm -3 , 2.944 9 10 6 cm -2 and 5.590 9 10 2 cm 2 V -1 s -1 , respectively. However, after Cu incorporation, these values varied in the range of (2.273 9 10 4 -13.80 9 10 4 ) X cm, (2.334 9 10 11 -9.094 9 10 13 ) cm -3 , (4.668 9 10 6 -1.819 9 10 9 ) cm -2 and (3.092 9 10 -1 -1.937 9 10 2 ) cm 2 V -1 s -1 , respectively.

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“…Since the (111) peak is the only one present and corresponds to the preferred orientation, this crystallite size was applicable perpendicular to the surface, and was found to have a minimum value of 12 nm for the Corning glass substrate. The micro-strain developed in the thin films was calculated using [27] 4 tan…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

Substrate dependent structural, optical and electrical properties of ZnS thin films grown by RF sputtering

Pathak

Kumar

Purohit

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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Growth and characterization of RF-sputtered ZnS thin film deposited at various substrate temperatures for photovoltaic application

Cited by 92 publications

References 15 publications

Effects of Al content on physical properties of ZnS thin films prepared by chemical bath deposition

Effects of Al content on physical properties of ZnS thin films prepared by chemical bath deposition

Effect of copper concentration on the physical properties of ZnS:Cu alloys prepared by chemical bath deposition

Substrate dependent structural, optical and electrical properties of ZnS thin films grown by RF sputtering

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