Growth and Characterization of Pulsed-Laser-Deposited Ilmenite–Hematite Thin Films

Abstract

The ilmenite-hematite (1 -x) FeTiO 3 Á xFe 2 O 3 solid solution system is considered to be a novel material for spin-electronics, microelectronics, hightemperature electronics, and radhard electronics. This paper focuses on thin films of composition x = 0.33 grown on (100) MgO single-crystal substrates using pulsed-laser deposition (PLD) under different argon-oxygen mixtures. The surface of the MgO was found to possess MgO 2 crystals, yielding an orientation relationship, [001] MgO k [011] MgO 2 and (100)MgO k (110) MgO 2 . The structural characterizations show that the films are crystalline and homogeneous without any secondary phase. The films show a weak and inclined (1120) growth epitaxy. A bandgap of 3.4-3.7 eV was obtained for these films from optical measurements carried out in the UV-visible region. Electrical measurements confirmed the semiconducting behavior. However, the resistivity was found to increase substantially on the slightest addition of oxygen into the chamber.

Novel magnetic-semiconductors in modified iron titanates for radhard electronics

“…However, when two-point measurements were conducted on the same sample highly non-linear I-V relationship was observed, consistent to our previous observations reported in [4,7,13,15,17,18]. A careful analysis suggested the existence of Schottky barriers which is the basis of all metal-semiconductor devices.…”

“…These films were grown by using a laser ablation system (PLD) and the experimental details are described in reference [12] for single crystal films of IHF33. The textured films have been dealt with in references [6,18] for multiple compositions of IH. Bulk single crystals of PsB were grown using the modified technique of high temperature solution growth [17].…”

“…Of special interests are IHF33 and IHC45, and single crystals of pseudobrookite (PsB). Some of these studies have been reported in references [6,7,[12][13][14][15][16][17][18][19]. In this paper our emphasis will be on materials characterization for radhard electronics, evaluation of magnetically and electrically tuned varistors and effect of a biasing voltage on the non-linear current-voltage (I-V) characteristics.…”

Atomic Layer Deposition of oriented nickel titanate (NiTiO3)

“…[48][49][50][51] In order to do this, a thin film technique with control of the composition at the atomic level, in addition to a precise thickness control, is required. Thin films of various (1−x)Fe2O3-(x)FeTiO3 compositions have indeed already been made, primarily by pulsed laser deposition (PLD), [52][53][54][55][56][57] but also sputtering. [58] Yet, little or no effort has been made to tailor the lamellar structure observed in mineral samples.…”

Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices

“…Only in the last few years this system has been studied seriously by various groups leading to some pioneering publications. The interested readers are referred to references [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. The importance of some members of the modified Fe-titanates to radhard electronics has been documented in references [7,[15][16][17][18].…”