Growth and Characterization of Polycrystalline CVD Diamond Films Obtained by MWPACVD at High Power 2,45GHz Microwave Discharge

Abstract

Among all the allotropic forms of carbon, diamond has attracted a broad scientific and technological interest for its extreme and unique properties rarely matched by other materials in nature. In a rapid rise from a technological point of view, much has been achieved in the study of obtaining this material through CVD technique. Studies of CVD diamond growth parameters of monocrystalline structure, underway in the team, are very expensive and time-consuming requiring in-depth studies of CVD diamond growth parameters of polycrystalline structure. So, this work presents an analysis focused on obtaining CVD diamond films with polycrystalline structure through the 2.45 GHz microwave plasma activation method (MWPACVD) in high power regime using a modified substrate holder to find a set of parameters appropriated for getting uniform quality and growth rate of thick films. The films were characterized using Raman scattering spectroscopy and scanning electron microscopy. The results point to optimized conditions for depositing films with growth rates of up to 20 µm/h with low levels of intrinsic stress, good structural quality and uniform microcrystalline morphology along the deposition surface.