Growth and characterization of nanostructured CdS/Polyaniline/CuInSe2 thin films for solar cell applications

Joshi, Rajesh A.; Taur, Vidya S.; Sharma, Ramphal

doi:10.1016/j.jnoncrysol.2011.09.010

Cited by 7 publications

(1 citation statement)

References 35 publications

(47 reference statements)

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“…5 In contrast to a variety of reports on n-type electron response, only limited studies using p-type optical transitions have been reported. [6][7][8] Major differences of the hole states from the electron counterparts originate from the heavier effective mass of holes and three sets of QD states, associated with three branches of the valence bands, i.e., the heavy-hole (HH), light-hole (LH), and spin-orbit split-off (SO) bands. This essentially results in much denser hole levels compared to electrons 1 and the possibility of many optical transitions between them.…”

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confidence: 99%

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Lao

Wolde

Perera

et al. 2014

Applied Physics Letters

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The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of the p-type hole response, a wellpreserved spectral profile, due to the much reduced tunneling probability of holes compared to electrons. This feature remains in a DWELL detector, with the dominant transition contributing to the response occurring between the QD ground state and the quantum-well states. The biasindependent response will benefit applications where single-color detection is desired and also allows achieving optimum performance by optimizing the bias. V C 2014 AIP Publishing LLC.

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confidence: 99%