2017
DOI: 10.1088/2053-1591/aa6df3
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Growth and characterization of nanocrystalline SrTiOxfilms: room temperature deposition using RF sputtering system in a pure argon environment

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Cited by 3 publications
(3 citation statements)
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“…Conversely, as-deposited films revealed a lower areal capacitance of (104 nF/cm 2 ) with a lower dielectric constant of 13, compared to the other samples. Preforming the dual voltage sweep of (C-V), through the range of (-20) V to (+9) V, showed a shift towards a positive bias suggesting the presence of positively charged traps and/or a lattice mismatch between the silicon/STO interface [27]. There is usually a strong coupling of lattice strain to polarization which, in sequence, affects the ferroelectric properties of dielectric films and, hence, their hysteresis voltages [28].…”
Section: Resultsmentioning
confidence: 99%
“…Conversely, as-deposited films revealed a lower areal capacitance of (104 nF/cm 2 ) with a lower dielectric constant of 13, compared to the other samples. Preforming the dual voltage sweep of (C-V), through the range of (-20) V to (+9) V, showed a shift towards a positive bias suggesting the presence of positively charged traps and/or a lattice mismatch between the silicon/STO interface [27]. There is usually a strong coupling of lattice strain to polarization which, in sequence, affects the ferroelectric properties of dielectric films and, hence, their hysteresis voltages [28].…”
Section: Resultsmentioning
confidence: 99%
“…However, high deposition temperature is a major limitation associated with the commercialization of these materials. Therefore, low‐temperature growth, and understanding its structural‐properties relationship are of significant contribution to the field 15,16 …”
Section: Introductionmentioning
confidence: 99%
“…Therefore, low-temperature growth, and understanding its structural-properties relationship are of significant contribution to the field. 15,16 SrTiO 3 thin films have been deposited on variety of substrates, depending on the application. For example, the integration of STO thin films with Si substrates is highly desirable for CMOS-applications.…”
Section: Introductionmentioning
confidence: 99%