Growth and characterization of MOMBE grown HfO2

Thermal behavior of the microstructure and the electrical properties of magnetron-sputtered high-k titanium silicate thin films

“…13,22,[24][25][26][27] On the other hand, the important degradation of the leakage currents of the Ti-silicate films with T d ͑or T a ͒ reported in Fig. First of all, the rather large variation of the k values from 16 to 25 with T d ͑Fig.…”

“…2,3,11,13,14,[18][19][20][21][22][23][24][25][26][27] Silicates ͑i.e., a mixture of a metal oxide and SiO 2 ͒ have also been widely investigated, with the main focus put on Hf silicates. 2,3,11,13,14,[18][19][20][21][22][23][24][25][26][27] Silicates ͑i.e., a mixture of a metal oxide and SiO 2 ͒ have also been widely investigated, with the main focus put on Hf silicates.…”

Characterization of high-k HfO2 films prepared using chemically modified alkoxy-derived solutions

“…[6][7][8][9][10][11][12][13] Also, some groups reported the synthesis of HfO 2 films via chemical solutions. 14,15 In our previous work, the preparation of the HfO 2 films by chemical solution deposition has been studied.…”

Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes

“…HfO 2 films have a high transparency over a wide spectral range, extending from the ultraviolet to the mid-infrared because of wide bandgap (5.68 eV) [11]. The reasons for using high-k dielectrics are increasing the physical thickness of the film to reduce electron tunneling and improving a higher permittivity, which would create the capacitance characteristics of a much thinner SiO 2 [12]. Among many candidate materials, HfO 2 is expected to be one of the most promising materials due to its desirable properties: high dielectric constant (∼30) and relatively low leakage current [13][14][15].…”