2005
DOI: 10.1016/j.surfcoat.2004.08.174
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Growth and characterization of MAX-phase thin films

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Cited by 181 publications
(91 citation statements)
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“…One, the calculated energy difference between the competing phases is based on Ti 5 [90,91,93], that have been predicted to be stable or nearly stable, and one might therefore expect them to be possible to synthesize at least by nonequilibrium methods such as magnetron sputtering. These predictions have not been corroborated by experimentalists, who have been unable to synthesize the V-Si-C or Nb-Si-C MAX phases [104]. Seemingly, the issue here is that the assumptions behind these predictions do not accurately portray reality: the competing silicides are stabilized by incorporation of C (which is not included in the calculations).…”
Section: Can Ti 2 Sic Exist?mentioning
confidence: 90%
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“…One, the calculated energy difference between the competing phases is based on Ti 5 [90,91,93], that have been predicted to be stable or nearly stable, and one might therefore expect them to be possible to synthesize at least by nonequilibrium methods such as magnetron sputtering. These predictions have not been corroborated by experimentalists, who have been unable to synthesize the V-Si-C or Nb-Si-C MAX phases [104]. Seemingly, the issue here is that the assumptions behind these predictions do not accurately portray reality: the competing silicides are stabilized by incorporation of C (which is not included in the calculations).…”
Section: Can Ti 2 Sic Exist?mentioning
confidence: 90%
“…As noted in Table 1 [45,46,102,104]. The most advantageous aspect of using three elemental targets is the flexibility achieved by the individual control of the elemental fluxes.…”
Section: Sputtering With 3 Sourcesmentioning
confidence: 99%
“…In the latter examples the focus is primarily on achieving single-phase films of high density, where steps towards making high quality single crystal samples have mostly been taken since 2010. A routine method to synthesize these materials in thin film form is PVD, such as cathodic arc [102], or, most often, magnetron sputtering [98,103,104] which, combined with a suitable substrate and co-deposition from elemental targets at a relatively high temperature, can yield epitaxial single phase thin films of high crystal quality. It is therefore easier to obtain phase-pure samples with crystals oriented in a single direction and this allows for a more detailed analysis of the materials properties.…”
Section: Thin Film Synthesismentioning
confidence: 99%
“…for Ti 3 SiC 2 contacts to SiC. [20][21][22] As thin films, the close relatives of Cr 2 GeC, Ti 2 GeC, [23][24][25][26] V 2 GeC, 27,28 and Cr 2 AlC [29][30][31][32][33][34] have all been investigated. From a potential technological viewpoint, the latter two are particularly interesting since they can be grown at a relatively low substrate temperature (450 • C), 27,29 which is essential for deposition onto technologically relevant substrates, such as steels.…”
Section: Introductionmentioning
confidence: 99%