Growth and characterization of low-threshold 1.3 μm GaAsSb quantum well laser

Abstract

Strained GaAsSb/GaAs quantum wells grown on GaAs substrate, which exhibit a staggered type41 band alignment, are of interest for infrared optoelectronic devices applications, because of its optical interband transitions occur at longer wavelengths than those corresponding to the fundamental band gap energies of each constituent. The quantum wells have been used successfully to fabricate laser diodes, which have emerged to be one of the candidates for 1 . 3~ laser source on GaAs substrate [l]. In this study, by using Sb monomer to deposit GaAsSb layer, we demonstrate a high quality low-threshold GaAsSb/GaAs double quantum well laser diode.