Growth and characterization of La3Ga5.5Nb0.5O14 crystal

Kong, Huijun; Wang, Jing; Zhang, Huaijin; Yin, Xian‐Hong

doi:10.1016/j.jcrysgro.2006.04.069

Cited by 19 publications

(8 citation statements)

References 14 publications

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“…The specific heat of Dy:LGN increased slightly as a function of temperature in the measured temperature range. It is about 0.48 Jg -1 deg -1 at 303 K, which is consistent with the results reported in [18]. Dy:LGN belongs to the trigonal crystallographic system, 32 point group, and has two independent thermal expansion coefficients, α 11 and α 33 .…”

Section: Resultssupporting

confidence: 90%

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Czochralski growth and characterization of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals

Yu¹,

Yuan²,

Zhao³

et al. 2009

Cryst. Res. Technol.

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Dysprosium (Dy) doped La 3 Ga 5.5 Nb 0.5 O 14 single crystals were grown by the traditional Czochralski method along z-axis. The structure of the crystal has been studied by X-ray powder diffraction method, and the unitcell parameters are calculated to be a=8.22070 Å, c=5.12533 Å and V=299.965 Å 3 . The segregation coefficient of Dy 3+ in La 3 Ga 5.5 Nb 0.5 O 14 crystal was measured by X-ray fluorescence analysis. For 1 mol% doping level in the melt, the distribution coefficient of Dy 3+ was determined to be 0.341 wt%. Specific heat, thermal expansion and transmission spectrum of Dy: La 3 Ga 5.5 Nb 0.5 O 14 single crystals have been measured. The fluorescence spectra of Dy

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Section: Resultssupporting

confidence: 90%

“…LGN is similar to LGS [18] and LGT [19], while a little larger than pure LGN [18]. Transmission spectrum Transmission spectrum measurement was carried out on a U-3500 spectrophotometer from Hitachi.…”

Section: Resultsmentioning

confidence: 99%

Czochralski growth and characterization of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals

Yu¹,

Yuan²,

Zhao³

et al. 2009

Cryst. Res. Technol.

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“…There are three positions for the Ga 3+ cation, being located in octahedral, tetragonal, and trigonal pyramidal sites, respectively, thus exhibiting random (disordered) behavior. The structural disorder affects the material uniformity and results in incoherent phonon scattering, which increases the mechanical loss . It was reported that the piezoelectric coefficient d 11 increases with increasing lattice parameter a , more clearly, the d 11 value is related to A–O length in the Thomson cube, where the piezoelectric modulus d 11 improves with increasing A–O distance .…”

Section: New High Temperature Piezoelectric Crystalsmentioning

confidence: 99%

Piezoelectric Materials for High Temperature Sensors

Zhang

2011

Journal of the American Ceramic Society

701

379

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Piezoelectric materials that can function at high temperatures without failure are desired for structural health monitoring and/or nondestructive evaluation of the next generation turbines, more efficient jet engines, steam, and nuclear/electrical power plants. The operational temperature range of smart transducers is limited by the sensing capability of the piezoelectric material at elevated temperatures, increased conductivity and mechanical attenuation, variation of the piezoelectric properties with temperature. This article discusses properties relevant to sensor applications, including piezoelectric materials that are commercially available and those that are under development. Compared to ferroelectric polycrystalline materials, piezoelectric single crystals avoid domain-related aging behavior, while possessing high electrical resistivities and low losses, with excellent thermal property stability. Of particular interest is oxyborate [ReCa 4 O (BO 3 ) 3 ] single crystals for ultrahigh temperature applications (>1000°C). These crystals offer piezoelectric coefficients d eff , and electromechanical coupling factors k eff , on the order of 3-16 pC/N and 6%-31%, respectively, significantly higher than those values of a-quartz piezocrystals (~2 pC/N and 8%). Furthermore, the absence of phase transitions prior to their melting points~1500°C, together with ultrahigh electrical resistivities (>10 6 Ω·cm at 1000°C) and thermal stability of piezoelectric properties (< 20% variations in the range of room temperature~1000°C), allow potential operation at extreme temperature and harsh environments. J ournalFeature investigated for high temperature pressure, mass, and chemical/gas measurements. To date, quartz (a-SiO 2 ), lithium niobate (LiNbO 3 ), langasite (La 3 Ga 5 SiO 14 ), and gallium orthophosphate GaPO 4 , have been widely investigated for SAW/BAW high temperature sensor applications. 13,14 The purpose of this feature article is to present an overview of various types of piezoelectric materials that are used for sensors, while focusing on high temperature piezoelectric single crystals, specifically, langasites (with formula A 3 BC 3 D 2 O 14 ) and oxyborate (ReCa 4 O(BO 3 ) 3 ) crystals. In this review, issues and critical parameters relevant to high temperature sensing will be discussed, followed by an extensive review of piezoelectrics, including ferroelectric materials with various crystallographic structures and nonferroelectric piezoelectric single crystals. Furthermore, the high temperature behavior of various piezoelectric materials will be presented, including temperature dependent electrical resistivity, dielectric, piezoelectric, electromechanical, and frequency characteristics. Lastly, a brief summary and anticipated future development in the area of piezoelectric materials for high temperature sensors will be given.

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“…According to Scherrer's equation, the grain size of the samples calcined 800 • C is about 30 nm. Compared with solid-stated synthesis method [6,8], these nanoscaled LGN powders are synthesized at fairly lower calcining temperature. The possible reasons for these cases may be the molecular level mixing of La 3+ , Ga 3+ and Nb 5+ ions, the high degree of homogeneity shortened the ion diffusion distance [9].…”

Section: X-ray Powder Diffractionmentioning

confidence: 99%

“…Gallate crystals such as La 3 Ga 5 SiO 14 (LGS), La 3 Ga 5.5 Nb 0.5 O 14 (LGN) and La 3 Ga 5.5 Ta 0.5 O 14 (LGT) have been actively investigated for application in the above-mentioned devices [2][3][4][5]. However, because one of the starting materials Ga 2 O 3 is apt to decompensate and evaporate at high temperatures, extra Ga 2 O 3 of 1-2 wt.% must be added to the starting materials in order to compensate for the volatilization of Ga 2 O 3 during the crystal growth process [6] or control the growth atmosphere in order to avoid the evaporation of gallium suboxide from melt during growth [3,7]. An alterna- * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

Citrate sol–gel method to prepare nanoparticles of a piezoelectric crystal material: La3Nb0.5Ga5.5O14 at low temperature

Yuan

Duan

et al. 2008

Journal of Alloys and Compounds

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Growth and characterization of La3Ga5.5Nb0.5O14 crystal

Cited by 19 publications

References 14 publications

Czochralski growth and characterization of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals

Czochralski growth and characterization of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals

Piezoelectric Materials for High Temperature Sensors

Citrate sol–gel method to prepare nanoparticles of a piezoelectric crystal material: La3Nb0.5Ga5.5O14 at low temperature

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Growth and characterization of La3Ga5.5Nb0.5O14 crystal

Cited by 19 publications

References 14 publications

Czochralski growth and characterization of Dy: La3Ga5.5Nb0.5O14 single crystals

Czochralski growth and characterization of Dy: La3Ga5.5Nb0.5O14 single crystals

Piezoelectric Materials for High Temperature Sensors

Citrate sol–gel method to prepare nanoparticles of a piezoelectric crystal material: La3Nb0.5Ga5.5O14 at low temperature

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Product

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Czochralski growth and characterization of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals

Czochralski growth and characterization of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals