Growth and characterization of InCrN and (In,Ga,Cr)N

Abstract

InCrN and a new quaternary alloy (In,Ga,Cr)N were synthesized by molecular beam epitaxy. Their structural properties were studied with X‐ray diffraction and X‐ray absorption fine structure (XAFS). It was found that low temperature growth enables the growth of InCrN and (In,Ga,Cr)N with higher Cr contents, while they were not crystallized at higher substrate temperature (450 °C). XAFS studies suggest that Cr atoms substitute on cation sites and no trace of locally formed secondary phases, such as Cr cluster, CrN (NaCl type) and Cr2N, in the grown InCrN and (In,Ga,Cr)N layers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Structural properties of AlCrN, GaCrN and InCrN

“…Cr atoms which were not substituted on Ga sites, segregated to form a CrN phase with NaCl structure. We also found that the lowtemperature growth (350 1C) enables the growth of InCrN with higher Cr contents, while at higher substrate temperature (450 1C) InCrN was not crystallized and In droplets were formed on the sample surface [9]. It indicates that In-N bond was dissociated because of the week bond strength.…”

Structural Properties of Ammoniated Thin Cr Films with Oxygen Incorporated During Deposition

“…1) 최근에는 CrN 박막이 사파이어 기 판위에 GaN를 에피택시 성장하는데 있어 완충 층으로 채택되었다. 2) 또한 CrN는 상온에서의 전기전도도가 5.5 × 10 1 Ω −1 cm −1 이고, 에너지 밴드갭이 71 meV인 반도체로서, 3) GaN, InN 등과의 혼정화에 의한 (Ga, In, Cr)N가 새로 운 자성 반도체로 제시되었으며, 4) CrN와 GaN 사이의 화 합물인 Cr 2 GaN가 GaN 기반 전자소자의 옴성 전극으로 검토되었다. 5) 일반적으로 CrN 박막은 N 2 가스 분위기에서의 반응 성 스퍼터링법 6) 또는 아크방전법 7) 등 물리적 증착 방법 으로 제작되거나 스퍼터링된 Cr 박막을 NH 3 와 N 2 가스 분위기에서 열처리하는 방법으로 제작된다.…”