Growth and characterization of In1−xGaxSb by metalorganic magnetron sputtering

Abstract

The growth and optical band gaps of heteroepitaxial layers of the ternary In1−xGaxSb [0≤x≤1] on (100)GaAs is reported. The epilayers, prepared by metalorganic magnetron sputtering using trimethyindium, trimethylgallium, and a sputtered antimony beam, showed good structural and surface morphologies despite a lattice mismatch between substrate and epilayer of 9%–14%. Secondary ion mass spectrometry analysis indicated a background carbon level in proportion to the gallium concentration. The high levels of carbon were not present in the InSb layers prepared using TMI. All films showed optical absorptions characteristic of direct gap semiconductors. The bowing parameter for the system is somewhat lower than that observed for the corresponding bulk material and may be related to compressive stress in the layers.

Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering

“…When T S decreases, the thermal cracking of metalorganic is reduced and plasma induced decomposition of metalorganic becomes the dominant process, leading to a decrease of the growth rate. When T S is lower than 430°C the growth rate was saturated at a low rate of 0.40 μm/h [27] indicating the over-through domination of the plasma induced decomposition mechanism. After the growth, these experimental samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), Hall and optical absorption measurements [27].…”

Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

“…For example, FWHM for AlGaAsSb film grown on GaSb (333) substrate by LPE technique was reported to be 53 arc sec (Bauser 1977). Similarly, the FWHM value for homoepitaxial GaSb prepared by metalorganic magnetron sputtering technique was reported to be 10⋅8 arc min (Rousina et al 1990). The reported FWHM value for homoepitaxial layer grown by MBE was 18⋅2 arc sec (McConville et al 1989).…”

Optical Properties

“…The reststrahlen parameters have been tabulated by Brodsky et al [107]. The absorption spectra a(E) in the fundamental absorption edge of Ga x In 1Àx Sb have also been measured at 300 K [109].…”