Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors

Manoel, E R; Custódio, Maria Cláudia Cerchiari; Guimarães, Francisco Eduardo Gontijo; Bianchi, Rodrigo Fernando; Hernandes, Antônio Carlos

doi:10.1590/s1516-14391999000200006

Cited by 27 publications

(10 citation statements)

References 16 publications

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“…Фiзичнi властивостi кристалiв PbI 2 є менш вивченими, нiж HgI 2 [2]. В той же час PbI 2 є бiльш перспективним матерiалом для розробки радiацiйних детекторiв завдяки їх бiльшiй хiмiчнiй стабiльностi [4,5]. Такi матерiали придатнi як для розробки радiацiйних детекторiв, основаних на прямому перетвореннi сигналу радiацiї в електричний сигнал, так i розробки радiацiйних сцинтиляторiв.…”

Section: вступunclassified

Фотолюмінесцентні властивості шаруватих твердих розчинів Pb1-xCdxI2

Гнатенко¹,

Furier²,

Буківський³

et al. 2022

Ukr. J. Phys.

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Проведено дослідження спектрів фотолюмінесценції, в тому числі із розділенням в часі, і фотодифузійного струму кристалів PbI2 та твердих розчинів Pb1-xCdxI2. Встановлено, що дані кристали мають монополярну (діркову) провідність. Показанаможливість утворення в твердих розчинах кластерів PbI2 різних розмірів. Встановлено, що величина розщеплення між Γ3–- та Γ1–-екситонними станами в таких кластерах становить 30 та 36 меВ для x = 0,50 та x = 0,70, відповідно. Виявлено, що для x ≥ 0,50 має місце автолокалізація екситонів в кластерах PbI2.

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Section: вступunclassified

Фотолюмінесцентні властивості шаруватих твердих розчинів Pb1-xCdxI2

Гнатенко¹,

Furier²,

Буківський³

et al. 2022

Ukr. J. Phys.

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“…3 HgI 2 is a good candidate because it has a wide band gap (>2.13 eV), high effective atomic number (e.g., Z Hg ¼ 80, Z I ¼ 53, Z eff ¼ 67. 12), and high mass density (6.4 g cm À3 ). 4 HgI 2 has numerous possibilities for crystallization and polytype formation.…”

Section: Introductionmentioning

confidence: 99%

“…6 Other studies have obtained HgI 2 using polycrystalline films produced by thermal evaporation, 7 spray pyrolysis, 8 physical vapor deposition, 9 and casting. 10 Still other techniques such as Physical Vapor Transport (PVT) 11,12 and solvent evaporation 13,14 are used to grow macroscopic HgI 2 crystals with dimensions in millimeters or centimeters. However, few studies report HgI 2 NC growth.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and growth of HgI2 nanocrystals in a glass matrix: Heat treatment

Condeles

Silva

et al. 2014

Journal of Applied Physics

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Articles you may be interested inGrowth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix AIP Advances 4, 107106 (2014); 10.1063/1.4897378 Glass viscosity dependant growth of CdS nanocrystals in silicate glass matrix AIP Conf. Proc. 1536, 57 (2013); 10.1063/1.4810098 Effect of post-deposition treatment on energy conversion efficiency of nanostructured CdS / Cu 2 S thin films AIP Conf. Proc. 1512, 752 (2013); 10.1063/1.4791256 Temperature dependent photoluminescence studies in Hg 0.2 Cd 0.8 Te nanorods synthesized by solvothermal method AIP Conf.Mercury iodide (HgI 2 ) nanocrystals (NCs) were successfully grown in a barium phosphate glass matrix synthesized by fusion. Growth control of HgI 2 NCs was investigated by Atomic Force Microscopy (AFM), Optical Absorption (OA), Fluorescence (FL), and X-ray diffraction (XRD). AFM images reveal the formation of HgI 2 nanocrystals in host glass matrix. HgI 2 NCs growth was evidenced by an OA and FL band red-shift with increasing annealing time. XRD measurements revealed the b crystalline phase of the HgI 2 nanocrystals. V C 2014 AIP Publishing LLC.

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“…Phase deposition using vertical or horizontal ampoule methods have been used to grow mercuric iodide crystals. Most of the reported growth processes were under vacuum [2,3], recent group [4] is planning to grow mercuric iodide crystals under gases such as argon or nitrogen.…”

Section: Introductionmentioning

confidence: 99%

Using Capacitance Measurements to Study Polarization in Mercuric Iodide Radiation Detectors

2007

Egyptian Journal of Solids

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Mercuric iodide is an interesting material for room temperature X-ray or gamma-ray spectrometers. This is due to its wide band gap (2.13 eV) and its high atomic numbers (80/53). A spectral resolution of better than 4% at 137 Cs has been reported. Mercuric iodide detectors suffer from polarization i.e., their electrical properties change with time and it will affect and reduce initial high spectral resolution and other electrical properties. This research paper is studying the polarization phenomena using capacitance measurements with low bias voltages and assuming a metal insulator semiconductor (MIS) structure.

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Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors

Cited by 27 publications

References 16 publications

Фотолюмінесцентні властивості шаруватих твердих розчинів Pb1-xCdxI2

Фотолюмінесцентні властивості шаруватих твердих розчинів Pb1-xCdxI2

Synthesis and growth of HgI2 nanocrystals in a glass matrix: Heat treatment

Using Capacitance Measurements to Study Polarization in Mercuric Iodide Radiation Detectors

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