Growth and characterization of (glass, Ag)/SeO2 thin films

Alharbi, S. R.; Qasrawi, A.F.; Algarni, Sabah E.

doi:10.1016/j.physb.2022.413790

Cited by 22 publications

(28 citation statements)

References 38 publications

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“…The hot probe technique has the p-type conductivity of SeO 2 . As shown in the energy band diagram presented in Figure 2a, from electronic point of view, as the electron affinity and energy band gap of SeO 2 are 1.89 eV 11 and 3.70 eV 12,13 , respectively, the work function ( ( ) ). Since the work function is larger than ( ( )…”

Section: Resultsmentioning

confidence: 99%

“…) 5.60 eV, any metal of 3.75 m qφ < <5.60 eV could possibly perform as Schottky contact with SeO 2 14 . However, the energy band gap of SeO 2 is mentioned containing energy band tails of width of 0.12 eV 13 . These band tails could behave as electron/hole centers forcing the Fermi level to be located near these localized states (very close to the valence band).…”

Section: Resultsmentioning

confidence: 99%

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Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

2022

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Herein, the design and characterization of Ag/SeO 2 /C avalanche type resonant tunneling devices are reported. Thin pellets of SeO 2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed tetragonal structure refereeing to space group of 2 4 mbc P and lattice parameters of a b = = 7.866 Å and c = 5.336 Å. The current-voltage characteristic curves have shown that SeO 2 can perform as active media to produce resonant tunneling diodes when forward biased and as avalanche type diode when reverse biased. The peak to valley current ratios of these diodes reached 18.3. In addition, the impedance spectroscopy measurements have shown that the device works in the low impedance mode when operated in the microwave range of frequency near 1.50 GHz. Negative conductance effect is observed in that frequency domain. The features of the Ag/SeO 2 /C nominate them for use as signal amplifiers and microwave oscillators.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

2022

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“…Domination of Schottky–Richardson field emission (tunneling) mechanism is satisfied under conditions where the ideality factor n = η = 1.0 and γ = 0. Reproduction of the experimental data which is shown by black colored circles in Figure 2a was possible by substituting the barrier width

false(W false)

value as 59 nm,

T = 300

K, Area

A = 7.06 \times 10^{- 6}

cm 2 , Richardson constant as

A^{**} = 120 m_{normalh}^{*}

= 42 A (cm 2 K 2 ) −1 assuming a hole effective mass of

m_{normalh}^{*}

= 0.35

m_{o}

, [ 6 ]

ε_{normalr} = 1.6

[ 6 ] and

q ϕ_{o} = 0.54

eV. Using the same parameters except for

q ϕ_{o}

values, it was possible to reproduce the experimental forward

I - V

curve in the “OFF” mode (inset of Figure 2c).…”

Section: Resultsmentioning

confidence: 99%

“…Following our previous works on powder pellets [ 6 ] and thin films of SeO 2 , [ 8 ] which revealed novel properties presented by negative conductance ( G ) and negative capacitance ( C ) effects near 410 MHz, we have repeated the measurements for the microwires. The resistance (

R = 1 / G

) and dielectric constant spectra

(ε_{normalr} = \frac{C d}{A}; d

is the wire length and A is the cross‐sectional area) are shown in Figure a,b.…”

Section: Resultsmentioning

confidence: 99%

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SeO₂ Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources

Qasrawi

Ghannam²

2022

Physica Status Solidi (a)

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Herein, the structural, morphological, compositional, and electrical properties of SeO2 microwires are studied and analyzed. Microwires of SeO2 with dimensions of 460 × 30 × 30 ( μ m ) 3 are electrically characterized in the temperature range of 17–300 K. SeO2 microwires are observed exhibiting nanocrystalline structures relating to a tetragonal phase. The microwires contained excess oxygen leading to some Se vacancies. The current–voltage (I–V) characteristics of the microwires displayed temperature‐dependent abrupt switching property revealing an “ON/OFF” current ratio of ≈90 at a threshold voltage of 0.48 V at 300 K. These features of the microwires remained down to 250 K. In addition, the temperature‐dependent electrical resistivity measurement showed that the microwires perform as a degenerate (metal like) semiconductors with quadratic temperature dependence (ρ false( T false) ∝ T 2 ). Moreover, impedance spectra analysis has shown that SeO2 microwires exhibit negative resistance and negative dielectric constant effects in the spectral ranges of 20–1800 MHz. The work here indicates that SeO2 microwires can perform much better than powders in pellets form or in thin‐film form. The resonance–antiresonance of dielectric constant and abrupt switching properties are accounted as remarkable features of the SeO2 microwires nominating them as abrupt electronic switches and signal amplifiers at workable in microelectronics.

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Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Algarni

Qasrawi

Khusayfan

2022

Cryst. Res. Technol.

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Magnesium selenide thin films are coated onto glass and semitransparent Pt substrates (nanosheets) by the vacuum evaporation technique under a vacuum pressure of 10 −5 mbar. The effect of Pt nanosheets of thicknesses of 100 nm on the structural, compositional, optical, and electrical properties of MgSe is explored. It is found that platinum nanosheets enhance the light absorbability in the visible and infrared ranges of light. They slightly redshift the energy bandgap and decrease the dielectric constant. The strong interaction between Pt and MgSe increases the electrical conductivity by five orders of magnitude. Pt forms shallow impurity levels in the energy bandgap of MgSe allowing the tunneling process at the Pt/MgSe interfaces. Practically, a Pt/MgSe/Pt tunneling type device is fabricated and tested by the microwave impedance spectroscopy technique. It is found that Pt/MgSe/Pt devices can exhibit resonance-antiresonance and negative capacitance effects which are important in electronic circuits as parasitic capacitance cancelers, signal amplifiers, and noise reducers. In addition, evaluation of the cutoff frequency spectra has shown the ability of using the Pt/MgSe/Pt devices as microwave resonators appropriate for 5G/6G technologies. A cutoff frequency larger than 70 GHz can be achieved by imposing ac signal of amplitude of 0.10 V.

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Growth and characterization of (glass, Ag)/SeO2 thin films

Cited by 22 publications

References 38 publications

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

SeO₂ Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

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Growth and characterization of (glass, Ag)/SeO2 thin films

Cited by 22 publications

References 38 publications

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

SeO2 Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Contact Info

Product

Resources

About

SeO₂ Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources