2014
DOI: 10.1016/j.jallcom.2013.09.200
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Growth and characterization of epitaxial iron–nitride thin films

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Cited by 23 publications
(13 citation statements)
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“…2 (b). It shows an asymmetric peak typically found in FeN films and the absence of sextet confirms B hf = 0 T. This peak has been fitted using a number of combinations of singlet (S) or doublet (D) such as: (i) two S [20,32,34,45] (ii) one S and one D [45,46,79] (iii) two S and one D [25]. In all these studies the component S with isomer shift (IS) ≈ 0 mm/s has always been assigned to Fe coordinated to four N neighbors as in ZB-type FeN.…”
Section: Structural and Magnetic Characterization Of Fen Thin Filmmentioning
confidence: 99%
“…2 (b). It shows an asymmetric peak typically found in FeN films and the absence of sextet confirms B hf = 0 T. This peak has been fitted using a number of combinations of singlet (S) or doublet (D) such as: (i) two S [20,32,34,45] (ii) one S and one D [45,46,79] (iii) two S and one D [25]. In all these studies the component S with isomer shift (IS) ≈ 0 mm/s has always been assigned to Fe coordinated to four N neighbors as in ZB-type FeN.…”
Section: Structural and Magnetic Characterization Of Fen Thin Filmmentioning
confidence: 99%
“…In each of the pills, the same elements with a similar percentage were detected. The Mössbauer spectroscopy measurements were taken using the MOSIEK-3E [4][5][6][7][8] analyzer. As an example, the resulting spectrum for B1 sample is shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…For transmission Mössbauer spectroscopy (TMS) [5][6][7][8] whole tablets, as prepared by the manufacturer, were * corresponding author; e-mail: rbrzozowski@wfis.uni.lodz.pl used which gives an effective thickness of about 6 mg Fe/cm 2 . Measurements were made at room temperature in the transmission geometry with the source Co-57 (50 mCi activity) in the rhodium matrix, moving at a constant acceleration.…”
Section: Methodsmentioning
confidence: 99%
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“…For example, pulsed laser deposition [14], molecular beam epitaxy (MBE) [15][16], facing target sputtering [17][18], magnetron sputtering [19][20], ion implantation [21][22], and RF reactive sputtering [23], were used to create Fe-N films at lower temperature. Mechanical alloying, chemical reaction, and nitriding were used to produce Fe-N powders from room temperature to 700°C [24][25][26].…”
Section: Introductionmentioning
confidence: 99%