Growth and characterization of doped hippuric acid crystals for NLO devices

Abstract

Modified hippuric acid (HA) single crystals have been grown from aqueous solution of acetone by doping with NaCl and KCl using slow evaporation technique at constant temperature, with the vision to improve the physicochemical properties of the sample. The characterisation of grown crystals was made by X-ray powder diffraction, density and melting point measurements. TGA/DTA studies indicate that doped crystals are more stable than pure crystals. The optical transmission study and Kurtz powder SHG measurement shows the suitability of doped crystals for NLO applications. Dopant concentration is identified with ICP atomic emission spectrometer system. The Vicker`s hardness studies at room temperature, carried out on (111) crystallographic plane shows increased hardness of the doped crystals.