Growth and Characterization of Cu2MnSnS4 Thin Films Synthesized by Spray Pyrolysis under Air Atmosphere

Abstract

The direct synthesis of chalcopyrite Cu2MnSnS4 (CMTS) thin films by a spray pyrolysis technique on glass substrates under oxidative conditions (ambient atmosphere and using compressed air as a carrier gas instead of nitrogen) was studied. The effect of the deposition temperature on the structural, chemical composition, and optical and electrical properties of thin films has been assessed. X-ray diffraction study reveals that the tetragonal stannite structure crystallizes with a [112] preferential orientation from 280 up to 360 °C, with its crystallinity correlated with the substrate temperature. However, in addition to its crystallization, traces of secondary phases are observed: a mixture of SnO and CuO at 360 °C prevails on the formation of CuS at 320 °C. Above 360 °C, the oxidant conditions combined with the loss in sulfur lead to the crystallization of only the tenorite CuO. The crystallization of sulfides by spray pyrolysis under air is possible only at relatively low deposition temperature for which the oxidation rate is inefficient compared to the sulfidation rate. Further optical studies of stannite films indicate a high absorption coefficient toward the visible range (>104 cm−1) and an optical band gap of about 1.64–1.85 eV, also depending on the substrate temperature. The CMTS thin films deposited below 360 °C exhibit a moderate electrical resistivity of about Ω·cm at room temperature. The properties of the stannite films synthesized using a spray pyrolysis technique in ambient air are comparable to those of films obtained by spray pyrolysis with nitrogen carrier gas despite the presence of oxides traces, an increase in the deposition temperature improving the microstructure, and its related optical and electrical properties.

Physical properties of Cu2MgSnS4 thin films prepared by chemical spray pyrolysis technique: The effect of thiourea concentration

“…This shift may arise from the micro-strain induced when the additives are incorporated during the film growth. The broadening of the diffraction peaks is an indication of the nano size of prepared material, which is in agreement with the previous reported results reported by Dridi et al [6].…”

“…The stress caused due to drying of thin films are primarily responsible for crack generation. During heating, the lowermost layer of the film bound to the substrate does not relieve the stress due to the subsequent coatings, which is in agreement with other reports [2,6].…”

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

“…We can indicate from Table 4, the sheet resistance values decreased with dip-coating cycle increased, this behaviour is due more density and homogeneity of CNTS sample dip-coater at 6 cycles. The values of resistivity and sheet resistance are comparable to the other research groups [51,52]. The values of electrical conductivity of the films deposited using 4 and 5 cycles are lower, the electrical conductivity of the CNTS thin film deposited at 6 cycles is more adaptable for solar cell applications, probably the existence of secondary phase NiS improve the electrical characteristics of CNTS thin films.…”

Synthesis of Submicron-Sized Spherical Silica-Coated Iron Nickel Particles with Adjustable Shell Thickness via Swirler Connector-Assisted Spray Pyrolysis

“…The average crystal sizes of the FeNi@SiO 2 particles obtained at a T p of 300, 400, 500, 600, and 700 °C were 46.6, 46.7, 54.0, 54.4, and 57.9 nm, respectively. This increase in the crystal size with T p suggested that higher T p induces crystal growth of the FeNi alloy. , …”