Growth and characterization of Cr-doped semi-insulating GaN templates prepared by radio-frequency plasma-assisted molecular beam epitaxy

Mei, Fei; Yang, Zhijie; Xu, Jinxia; Wu, Lei; Wu, Tiezhou; Zhang, Danming

doi:10.1016/j.jcrysgro.2012.05.027

Cited by 6 publications

(4 citation statements)

References 31 publications

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“…30) and Cr (ref. 31) that tend to aggregate into transition metal-rich nanocrystals for x ≳0.5% (refs 32, 33), the process destroying their carrier trapping capabilities32. Similarly, heavy doping with C acceptors results in the dislocation formation and the appearance of self-compensating defects3034.…”

Section: Discussionmentioning

confidence: 99%

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Stretching magnetism with an electric field in a nitride semiconductor

et al. 2016

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The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm−1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here.

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Section: Discussionmentioning

confidence: 99%

“…30) and Cr (ref. 31) that tend to aggregate into TM-rich nanocrystals for x 0.5% (ref. 32 and 33), the process destroying their carrier trapping capabilities 32 .…”

Section: Discussionmentioning

confidence: 99%

Stretching magnetism with an electric field in a nitride semiconductor

et al. 2016

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“…Importantly, it should be added that the established a very good command over the MBE growth allows to produce on demand high structural quality (Ga,Mn)N with x up to 10% [10] [29]. This is in contrast to other transition metals, such as Fe [42] and Cr [43], which tend to aggregate into metal-rich nanocrystals already for x > 0.5% [44] [ 45], what results in destroying their carrier trapping capabilities [44].…”

Section: Methodsmentioning

confidence: 99%

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Kalbarczyk

Dybko

Gas

et al. 2019

Journal of Alloys and Compounds

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Schottky barrier height and the ideality factor  are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10 M resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor  > 1.5 for T  300 K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.

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“…Various approaches have been investigated to obtain a high quality semi-insulating GaN layer. One approach is to compensate donor impurities by doping with deep acceptors such as iron [6,7], zinc [8], beryllium [9], chrome [10,11] or carbon [7,12]. However, these methods have undesired side-effects such as reactor contamination leading to strong memory effects [6].…”

Section: Introductionmentioning

confidence: 99%