Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTe

Kennedy, James J.; Amirtharaj, P. M.; Boyd, P. R.; Qadri, S. B.; Dobbyn, R. C.; Long, Gabrielle G.

doi:10.1016/0022-0248(90)90704-o

Cited by 68 publications

(16 citation statements)

References 6 publications

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“…This value nearly matches with the lattice constant of Hg 1-y Cd y Te (y = 0.22) (KENNEDY et al 1990). According to previous reports the lattice constant of the Cd 1-x Zn x Te films deposited onto different substrates, such as, glass, SnO 2 coated glass, ITO and silica were found to vary from 6.450 to 6.480 Å (CHU et al 1992: BASOL et al 1989: DEISS et al 1998: IBRAHIM et al 1998).…”

Section: Resultssupporting

confidence: 70%

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Sridharan

Narayandass

Mangalaraj

et al. 2002

Cryst. Res. Technol.

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Cd0.96Zn0.04Te thin films are deposited onto well cleaned glass substrates (Corning 7059) kept at room temperature by vacuum evaporation and the films are annealed at 423 K. Rutherford Backscattering Spectrometry and X‐ray diffraction techniques are used to determine the thickness, composition and crystalline structure and grain size of the films respectively. The films exhibited zinc blende structure with predominant (111) orientation. The surface morphology of the films is studied by Atomic Force Microscopy. The rms roughness of the as‐deposited films is 3.7 nm and on annealing the films at 423K, the rms roughness value decreases to 3.4 nm. The Raman spectra of the Cd0.96Zn0.04Te films are recorded at room temperature to study lattice vibrations and their interactions with other excitations. The intensity of the peak increases and the FWHM decreases on annealing the films. The pseudodielectric‐function spectra, ε(E) = ε1(E) + i ε2(E), of polycrystalline Cd0.96Zn0.04Te thin films in the 1.3 ‐ 5.5eV photon energy range at room temperature are measured by spectroscopic ellipsometry. The measured dielectric function spectra reveal distinct structures at energies of the E1, E1+Δ1 and E2 critical points are due to interband transitions.

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Section: Resultssupporting

confidence: 70%

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Sridharan

Narayandass

Mangalaraj

et al. 2002

Cryst. Res. Technol.

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“…Zn x Cd 1Àx Te is the basic element in the fabrication of the solid-state detectors below X-ray, beta ray, gamma ray, cosmic ray, and IR electromagnetic (EM) radiation detection observed in medicine [7], astronomy [8], and high energy physics [9]. Zn x Cd 1Àx Te has commonly been prepared for characterization as a single crystal grown by the Bridgman method [10][11][12][13] and the traveling heater technique [14]. The optical and magnetic properties of Zn x Cd 1Àx Te alloys have also been experimentally studied [15,16].…”

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confidence: 99%

Structural, electronic, linear, and nonlinear optical properties of ZnCdTe₂ chalcopyrite

Ouahrani

Reshak

Khenata

et al. 2010

Physica Status Solidi (b)

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We report results of first-principles density functional calculations using the full-potential linearized augmented plane wave method. The generalized gradient approximation (GGA) and the Engel-Vosko-GGA (EV-GGA) formalism were used for the exchange-correlation energy to calculate the structural, electronic, linear, and nonlinear optical properties of the chalcopyrite ZnCdTe 2 compound. The valence band maximum and the conduction band minimum are located at the G-point, resulting in a direct band gap of about 0.71 eV for GGA and 1.29 eV for EV-GGA. The results of bulk properties, such as lattice parameters (a, c, and u), bulk modulus B, and its pressure derivative B 0 are evaluated. The optical properties of this compound, namely the real and the imaginary parts of the dielectric function, reflectivity, and refractive index, show a considerable anisotropy as a consequence ZnCdTe 2 posseses a strong birefringence. In addition, the extinction coefficient, the electron energy loss function, and the nonlinear susceptibility are calculated and their spectra are analyzed.

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“…Secondly, its thermal conductivity is so low that substantial concavity is almost always present in the entire crystal growth process. Finally and most important is that the solute zinc segregation coefficient is rather high, about 1.35 [1][2][3].…”

Section: Introductionmentioning

confidence: 98%

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

Liu

Song

Zhang

et al. 2007

Cryst. Res. Technol.

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The temperature gradient within a furnace chamber and the crucible pull rate are the key control parameters for cadmium zinc telluride Bridgman single crystal growth. Their effects on the heat and mass transfer in front of the solid-liquid interface and the solute segregation in the grown crystal were investigated with numerical modeling. With an increase of the temperature gradient, the convection intensity in the melt in front of the solid-liquid interface increases almost proportionally to the temperature gradient. The interface concavity decreases rapidly at faster crucible pull rates, while it increases at slow pull rates. Moreover, the solute concentration gradient in the melt in front of the solid-liquid interface decreases significantly, as does the radial solute segregation in the grown crystal. In general, a decrease of the pull rate leads to a strong decrease of the concavity of the solid-liquid interface and of the radial solute segregation in the grown crystal, while the axial solute segregation in the grown crystal increases slightly. A combination of a low crucible pull rate with a medium temperature gradient within the furnace chamber will make the radial solute segregation of the grown crystal vanish.

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Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTe

Cited by 68 publications

References 6 publications

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Structural, electronic, linear, and nonlinear optical properties of ZnCdTe₂ chalcopyrite

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

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Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTe

Cited by 68 publications

References 6 publications

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Structural, electronic, linear, and nonlinear optical properties of ZnCdTe2 chalcopyrite

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

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Structural, electronic, linear, and nonlinear optical properties of ZnCdTe₂ chalcopyrite