Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target

Abstract

a b s t r a c tBi 2 Se 3 thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature −400°C). The effects of the substrate temperature on the structural and electrical properties of the Bi 2 Se 3 films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200°C. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400°C. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1 × 10 −3 to 3 × 10 −4 Ω cm as the substrate temperature was increased from room temperature to 400°C.

Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

“…7 Many different TIs have already been identified, 6 specifically thin films based on bismuth such as BiTe 3 8 and BiSe 3 . 9,10 Based on first-principles calculations 11,12 and preliminary growth studies, 13 YBiO 3 (YBO) appears to be of particular interest in the search for new topological materials. Although YBO thin films have been grown by chemical solution deposition, 14,15 so far very few successful attempts to grow single-crystalline films with PLD have been made, as concluded from the lack of publications.…”

Electrodeposition and ab Initio Studies of Metastable Orthorhombic Bi2Se3: A Novel Semiconductor with Bandgap for Photovoltaic Applications

“…There is general agreement that deposition at low (~ room) temperature leads to the growth of mixed phases, while the rhombohedral phase dominates at high growth temperature 17 ; a pure orthorhombic phase has been rarely reported [18][19] . As a consequence, little and confusing information on the electrical, optical and structural properties of this material is available, in net contrast to Bi2S3, Sb2S3 and Sb2Se3 that are relatively well characterized [20][21][22][23] .…”

Structural and electronic properties of Bi2Se3 topological insulator thin films grown by pulsed laser deposition

“…The unit cell spans three Bi-Se quintuple layers with lattice constants along the a-axis and c-axis of 0.414 nm and 2.864 nm, respectively. 11,12 Remarkably, even though most of the substrates used for the growth have very different in-plane lattice parameters (e.g., (001) Al 2 O 3 , 13 (111) SrTiO 3 , 14 (001) Si, 15 (111) Si, 16,17 and (111) InP 18 ), highly c-axis oriented Bi 2 Se 3 thin films have been deposited in all of the cases. However, azimuthal /-scans typically show a six-fold symmetry rather than the expected three-fold one, thus indicating that the film in-plane texturing derives from two domains, 60 rotated with respect to each other.…”