Growth and characterization of AlxGa1−xN via NH3-based metal-organic molecular beam epitaxy

Billingsley, Daniel; Henderson, Walter; Pritchett, David; Doolittle, W. Alan

doi:10.1016/j.jcrysgro.2008.12.032

Cited by 6 publications

(4 citation statements)

References 31 publications

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“…5. Compared with previously published AlGaN growths, 21 the Al composition for the same metal flow rate is higher when grown at higher temperatures. The slope of the curve is $1.6 for 950°C, as compared with the previously measured slope of $1 for AlGaN films grown at 870°C.…”

Section: Growth Of Ganmentioning

confidence: 57%

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

Billingsley

Henderson

Doolittle

2010

Journal of Elec Materi

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The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga 1Àx N grown by ammonia-based metalorganic molecular-beam epitaxy (NH 3 -MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at halfmaximum (FWHMs) of $350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of $0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH 3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of $0.85 nm with visible atomic steps.

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Section: Growth Of Ganmentioning

confidence: 57%

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

Billingsley

Henderson

Doolittle

2010

Journal of Elec Materi

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“…Follstaedt et al 31 have found that the density of dislocations is reduced when (Ga) atoms are more predominant in the gas mixture. The structural defects such as strains, bending, cracks, and dislocations can all contribute to the increase the rocking‐curve width when the Al solid composition is high 32. The relaxation of strains at high Al content leads to a high density of defects like cracks, which have an influence on the crystalline and morphological quality.…”

Section: Resultsmentioning

confidence: 99%

Characterization of low Al content Al_xGa_1−xN epitaxial films grown by atmospheric‐pressure MOVPE

Touré

Halidou

Benzarti

et al. 2012

Physica Status Solidi (a)

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Al x Ga 1Àx N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al x Ga 1Àx N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA þ TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content.

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“…Once loaded into the growth chamber, the samples were ramped to 650 1C under an NH 3 flow of 26 standard cubic centimeters per minute (sccm) where they were annealed for 30 min. Afterwards, the temperature was increased to the growth temperature at a rate of 2 1C s -1 under NH 3 .…”

Section: Methodsmentioning

confidence: 99%

“…The usefulness of AlGaN stems from its polar bonding and bandgap, which can be tailored from 3.4 to 6.2 eV by controlling the incorporation of Al into the alloy. Recently, we have reported the first AlGaN films grown by NH 3 -MOMBE [3]. Our interest in NH 3 -MOMBE is rooted in its unique capabilities over other deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

Billingsley

Henderson

Pritchett

et al. 2010

Journal of Crystal Growth

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Growth and characterization of AlxGa1−xN via NH3-based metal-organic molecular beam epitaxy

Cited by 6 publications

References 31 publications

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

Characterization of low Al content Al_xGa_1−xN epitaxial films grown by atmospheric‐pressure MOVPE

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

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Growth and characterization of AlxGa1−xN via NH3-based metal-organic molecular beam epitaxy

Cited by 6 publications

References 31 publications

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric‐pressure MOVPE

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

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Characterization of low Al content Al_xGa_1−xN epitaxial films grown by atmospheric‐pressure MOVPE