Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

Co–Ga codoping effect on preferred growth orientations and properties of ferromagnetic ZnO thin films

“…The polarization effects can be minimized by growing wurtzite materials on non-polar [4] or semi-polar planes [5]. In the reported literature, most of the studies on non-polar/semi-polar ZnO-based films have been performed on single crystal substrates such as ZnO [6,7], Al 2 O 3 [8][9][10][11] and LaAlO 3 [12], where substrate-guided epitaxial growth is dominant. However, it is highly desirable to develop a more convenient and economical way to produce non-polar/semi-polar ZnO-based films through the fabrication of self-textured film on inexpensive amorphous surfaces.…”

Influence of etching on the optical properties of a-plane-oriented ZnO epilayers grown by plasma-assisted molecular beam epitaxy

“…An emission was also identified lying in the first longitudinal optical phonon (LO) region, as defect resulting from the formation of basal stacking faults (Chauveau et al, 2007;Lim and Shindo, 2002). The bound excitons are labeled D 1 X, D 2 X, D 3 X and D 4 X.…”

“…Transmission electron microscopy (TEM) investigations were carried out in a JEOL 2010F field emission gun microscope. The results of these investigations are shown in a previous paper (Chauveau et al, 2007). Different etching solutions have been tested to etch the a-plane ZnO films as shown in Table 1.…”

Symmetry and optical properties of wurtzite nanostructures with the c axis in the layer plane

“…Nevertheless, the piezoelectric effect should be weak, if any, in the heterostructures since any monolayer involves the same numbers of cations and anions. Chauveau et al [17] have grown by MBE onto R-plane sapphire some A-plane ZnO layers 1 µm thick and two ZnO/Zn 0.83 Mn 0.17 O QWs with well width of 1.6 and 4.1 nm, respectively. The samples have their layer plane parallel to a symmetry plane of the wurtzite lattice (type I structures).…”