Growth and characteristics of type-II InAs/GaSb superlattice-based detectors

Khoshakhlagh, Arezou; Ting, David Z.; Soibel, Alexander; Höglund, Linda; Nguyen, Jean; Keo, Sam A.; Liao, Anna; Gunapala, Sarath D.

doi:10.1117/12.894286

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…[1,2] Meanwhile, the strain in InAs/GaSb SL facilitates suppression of interband tunneling and Auger recombination processes. [3,4] Although a few reports of dual band detectors based on InAs/GaSb SL have been reported such as fast and accurate detection of CO 2 using dual color in MWIR range [5] , missile approach warning systems with simultaneous and spatially coincident detection in both spectral channels et al, the multi color detectors from short, mid to long IR wavelength have not been reported.…”

Section: Introductionmentioning

confidence: 99%

Short to long-wave IR detectors based on InAs/GaSb superlattices in multi-color application

Guo

Wang

et al. 2013

SPIE Proceedings

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Recently excellent infrared detectors have been demonstrated using InAs/GaSb superlattice materials sensitive at wavelength from 3um to greater than 32um. Using empirical tight binding method (ETBM), different structures as InAs(xML)/GaSb(8ML)，(x＝2, 4, 6, 8) and InAs(14ML)/GaSb(7ML) were designed for various cut-off wavelengths from short to long IR wavelength. These materials were grown by MBE with valved cracker cells for arsenic and antimony on p-type GaSb(001) substrates. The microstructure and the bandgap Eg were verified by high resolution X-ray diffraction and photoresponse spectra. The temperature dependence of E g and photoresponse responsivity Rv were studied. The differential resistance under zero bias R 0 in MWIR photodiode was measured up to 10 6 ohms. The ideality factor in the range of 1.5 to 2.1 indicates the generation-recombination current and surface leakage current are the dominant leakage in the depletion region. These results will promote InAs/GaSb superlattices infrared detectors research in multi-color from short to long wave IR application.

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Section: Introductionmentioning

confidence: 99%

Short to long-wave IR detectors based on InAs/GaSb superlattices in multi-color application

Guo

Wang

et al. 2013

SPIE Proceedings

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Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector

Soibel

Rafol

Khoshakhlagh

et al. 2015

Applied Physics Letters

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In this work, we investigated the effect of proton irradiation on the performance of long wavelength infrared InAs/GaSb photodiodes (λc = 10.2 μm), based on the complementary barrier infrared detector design. We found that irradiation with 68 MeV protons causes a significant increase of the dark current from jd = 5 × 10−5 A/cm2 to jd = 6 × 10−3 A/cm2, at Vb = 0.1 V, T = 80 K and fluence 19.2 × 1011 H+/cm2. Analysis of the dark current as a function of temperature and bias showed that the dominant contributor to the dark current in these devices changes from diffusion current to tunneling current after proton irradiation. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by trap-assisted tunneling processes in proton displacement damage areas located near the device sidewalls.

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