Growth and Characterisation Studies of Eu$_3$O$_4$ Thin Films Grown on Si/SiO$_2$ and Graphene
R. O. M. Aboljadayel,
A. Ionescu,
O. J. Burton
et al.
Abstract:We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu 3 O 4 , thin films grown on a Si/SiO 2 substrate and Si/SiO 2 /graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu 3 O 4 (001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO 2 substrate. The SQUID measurements show that both films have a Curie temperature of 5.5 ± 0.1 K, with a… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.