Growth and characterisation of semi-polar InGaN/GaN MQW structures

Kappers, Menno J.; Hollander, J. L.; McAleese, C.; Johnston, Carol F.; Broom, R. F.; Barnard, J. S.; Vickers, M. E.; Humphreys, C. J.

doi:10.1016/j.jcrysgro.2006.11.008

Cited by 68 publications

(61 citation statements)

References 17 publications

(16 reference statements)

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“…The polarity of such ð1122Þ orientated layers was determined by Kappers et al [10] as Ga-polar, which agreed to our preliminary TEM investigations.…”

Section: Methodssupporting

confidence: 91%

Crystal orientation of GaN layers on (1010) m‐plane sapphire

Frentrup

Ploch

Pristovsek

et al. 2011

Physica Status Solidi (b)

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Based on the atomic arrangement of the ð1010Þ m-plane sapphire surface, we have developed a model for the initial nucleation process of gallium-nitride (GaN). This model describes why ð1122Þ and ð101 3Þ are the preferred orientations of GaN on the ð1010Þ sapphire. The experimental results from high-resolution X-ray diffraction measurements, like the crystallographic relations and the twinning of the ð1103Þ orientation are explained by the model too. Our model also predicts that ð1122Þ thin films are metal-polar and ð1103Þ thin films are nitrogen-polar. and their ternary alloys are of great interest for optoelectronic applications such as multiple-quantum-well (MQW) LEDs and laser diodes emitting in the blue and green wavelength region. Such devices are commonly grown on the polar (0001) plane. Heterostructures grown on the polar planes exhibit strong piezoelectric and spontaneous polarization fields resulting in a reduction of the radiative recombination efficiencies and a red-shift in the emission wavelength due to the quantum confined Stark effect (QCSE) [1]. The QCSE can be strongly reduced or even avoided by using non-and semi-polar crystal orientations, which exhibit only small polarization fields in the growth direction [2].First non-and semi-polar bulk GaN crystals are available. However these substrates are still very small and rather costly. Non-polar and semi-polar orientated layers can be realized on sapphire substrates, which are available in 2

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“…The polarity of such ð1122Þ orientated layers was determined by Kappers et al [10] as Ga-polar, which agreed to our preliminary TEM investigations.…”

Section: Methodssupporting

confidence: 91%

Crystal orientation of GaN layers on (1010) m‐plane sapphire

Frentrup

Ploch

Pristovsek

et al. 2011

Physica Status Solidi (b)

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“…wafer quarters of MOVPE-grown ð11 22Þ GaN buffer layers deposited on m-plane sapphire substrates. The MOVPE growth of the ð11 22Þ GaN templates is reported elsewhere, 19 with samples exhibiting typical threading dislocation and BSF densities of (3.0 6 0.2) Â 10 10 cm À2 and (3.2 6 0.3) Â 10 5 cm À1 , respectively. 7 InGaN layers were also simultaneously grown on (0001) GaN templates for comparison.…”

Section: Methodsmentioning

confidence: 99%

“…36 The ð11 22Þ GaN templates with the high BSF density (%(3.2 6 0.3) Â 10 5 cm À1 ), which are mainly discussed here, were grown on m-plane sapphire. 7,19 Both InGaN quantum wells (%4-10 nm) and single layers (%30 nm) with 15%-23% In-content grown on the two different GaN templates show similar RT-PL emission wavelengths indicating that the effect of BSFs on the redshift of the ð11 22Þ InGaN NBE is weak. The PL peak emission wavelength of the ð11 22Þ InGaN layers shows a strong blue-shift (up to %60 nm) with increasing excitation power (Fig.…”

Section: Optical Propertiesmentioning

confidence: 99%

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Dinh

Oehler

Zubialevich

et al. 2014

Journal of Applied Physics

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InGaN layers were grown simultaneously on (112¯2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (<15%) of the (112¯2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112¯2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112¯2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112¯2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112¯2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

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“…Also the intrinsic field leads to a spatial separation of electron and hole wave functions, causing a reduced radiative recombination rate [4,6], an effect that can be particularly undesirable for high-efficiency optoelectronic devices. To circumvent these effects arising from the intrinsic built-in fields, which fundamentally are caused by the growth along the polar c axis, significant research has been directed towards the fabrication of semi-and nonpolar structures [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. In the case of semi-and nonpolar planes the c axis is at a nonvanishing angle with respect to the growth direction.…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Schulz¹,

Tanner

O’Reilly

et al. 2015

Phys. Rev. B

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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an m-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

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Growth and characterisation of semi-polar InGaN/GaN MQW structures

Cited by 68 publications

References 17 publications

Crystal orientation of GaN layers on (1010) m‐plane sapphire

Crystal orientation of GaN layers on (1010) m‐plane sapphire

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

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