Group-IV nanocluster formation by ion-beam synthesis

Skorupa, W.; Rebohle, L.; Gebel, T.

doi:10.1007/s00339-002-1947-x

Cited by 65 publications

(48 citation statements)

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“…The formation of dispersed second phase nanoparticle ͑NP͒ systems in silica films via ion beam synthesis have been extensively studied in connection with technical applications exploring luminescent [1][2][3] or electrostatic [4][5][6] ͑Cou-lomb blockade͒ properties for the development of silicon based devices. The primary concept behind the ion beam synthesis method relies on the formation of a supersaturated solid solution produced by the implantation process, followed by the nucleation and growth of the new phase upon post-implantation thermal treatments.…”

Section: Introductionmentioning

confidence: 99%

Aging effects on the nucleation of Pb nanoparticles in silica

Luce

Kremer

Reboh

et al. 2011

Journal of Applied Physics

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The ion beam synthesis of Pb nanoparticles (NPs) in silica is studied in terms of a two step thermal annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time one. The samples are investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The results obtained show that highly stable Pb trapping structures are formed during the aging treatment. These structures only dissociate at high temperatures, inhibiting the nucleation of NPs in the metallic phase and causing an atomic redistribution that renders the exclusive formation of a two dimensional, uniform and dense array of Pb NPs at the silica–silicon interface. The results are discussed on the basis of classic thermodynamic concepts.

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Section: Introductionmentioning

confidence: 99%

Aging effects on the nucleation of Pb nanoparticles in silica

Luce

Kremer

Reboh

et al. 2011

Journal of Applied Physics

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“…The gate voltage causes electrons to be continuously tunnelling from the inverted substrate to the gate. When these electrons are injected into the conduction band of the SiO 2 excite Si-nc, generating electron-hole pairs that recombine radiatively [3,4,17]. The spectrum is centred at ∼725 nm and has a full-width at half-maximum of ∼220 nm.…”

Section: Methodsmentioning

confidence: 99%

“…Silicon nanocrystal (Si-nc) based devices have recently attracted much attention for a wide range of applications, including non-volatile memories [1], light emitting devices [2,3,4,5,6,7] and luminescence sensitizers of dopants such as Erbium [8]. A success in obtaining Erbium population inversion and net signal gain in the latter application would allow the realization of an all-silicon laser (either with optical or electrical pump), which is highly desirable for silicon photonics.…”

Section: Introductionmentioning

confidence: 99%

“…A success in obtaining Erbium population inversion and net signal gain in the latter application would allow the realization of an all-silicon laser (either with optical or electrical pump), which is highly desirable for silicon photonics. However, Si-nc have not been considered as good candidates for high-speed applications [4] due to the limitation imposed by their characteristic radiative lifetimes, which make them transparent for excitation frequencies higher than a few kilohertz. This fact forces light modulators for silicon photonics being designed as independent elements that receive light from a constant external source to output a pulsed beam according to a pattern of information to be transmitted [9,10,11,12].…”

Section: Introductionmentioning

confidence: 99%

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Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals

et al. 2008

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Abstract. We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by ion implantation of Si + in the 15-nm-thick gate oxide of a field effect transistor at 6.5 keV. A characteristic readpeaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation it is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which make impossible the direct modulation of light beyond 100 Kb/s rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100%-deep modulation at rates of 200 Mb/s and low modulating voltages. This approach, may find applications in biological sensing integrated into CMOS, single-photon emitters, or direct encoding of information into light from Si-nc doped with Erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (10 5 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. A Si/SiO 2 barrier change from Φ b =3.2 eV to 4.2 eV is found while the injection mechanism is changed from Fowler-Nordheim to Channel Hot Electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching.

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“…The use of silicon (Si) nanocrystals (NCs) instead of standard polycrystalline silicon floating gate was proposed and many studies have been made describing the NC capabilities in different devices (Tiwari et al, 1995;Park et al, 2003;Conibeer et al, 2006). However, due to their large bandgap variations and their potential for bringing a strong quantum confinement, germanium NCs have attracted more interest than Si-NCs as reported in many studies (Choi et al, 1999;Skorupa et al, 2003;Chatterjee et al, 2008). For non-volatile memory device application, a long charge retention time at room temperature is the most important.…”

Section: Introductionmentioning

confidence: 99%