Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects

Belaid, Walid; Ghazi, Haddou El; Basyooni, Mohamed A.; Zorkani, Izeddine; Jorio, Anouar

doi:10.1080/14786435.2022.2100939

Philosophical Magazine

2022

DOI: 10.1080/14786435.2022.2100939

|View full text |Cite

Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects

Walid Belaid

Haddou El Ghazi

Mohamed A. Basyooni

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2023

Publication Types

Select...

Article3

Relationship

Self Cite1

Independent2

Authors

Journals

Cited by 3 publications

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Probing semiconductor quantum well qubits and associated Shannon entropy using semi-relativistic quantum mechanics

Tshipa

2023

Opt Quant Electron

View full text Add to dashboard Cite

Electron states in GaAs, GaN and AlN quantum wells are studied by solving a semi-relativistic wave equation within the effective mass approximation. The quantum states are in turn used to probe the properties of two-level qubits formed in the different quantum wells at various temperatures. Results indicated that the period of oscillation between the quantum states increases with increasing width of the quantum wells, with AlN having the longest period and shortest for GaAs. Transition rates were also studied, since their product with the period of oscillation yield important information concerning the feasibility of carrying out a quantum computation. This product is equivalent to the ratio of the period of oscillation between states to the lifetime of an electron in an excited state. From the results, GaAs quantum wells may be preferable as they have the lowest ratio compared with the other quantum wells of other materials. AlN has the highest ratio of the three semiconductors considered here. Shannon entropy in the different quantum wells was studied also. It was found that the entropy in GaAs quantum wells varies rapidly through the passage of time, while those of GaN and AlN vary relatively slowly.

show abstract

Probing semiconductor quantum well qubits and associated Shannon entropy using semi-relativistic quantum mechanics

Tshipa

2023

Opt Quant Electron

View full text Add to dashboard Cite

show abstract

Terahertz resonance frequency through ethylene glycol phononic multichannel sensing via 2D MoS2/PtSe2 structure

Zaki

Basyooni

Belaid

et al. 2022

Materials Chemistry and Physics

View full text Add to dashboard Cite

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

et al. 2023

Self Cite

View full text Add to dashboard Cite

The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al,Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects

Cited by 3 publications

References 53 publications

Probing semiconductor quantum well qubits and associated Shannon entropy using semi-relativistic quantum mechanics

Probing semiconductor quantum well qubits and associated Shannon entropy using semi-relativistic quantum mechanics

Terahertz resonance frequency through ethylene glycol phononic multichannel sensing via 2D MoS2/PtSe2 structure

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

Contact Info

Product

Resources

About