“…Many techniques have been reported to observe/measure SSD in silicon wafers: angle polishing (Abe et al, 1994;Tonshoff et al, 1997), angle lapping (Jeong et al, 2000;Oh et al, 1999), step polishing (Stephens, 1986), step etching plus scanning infrared depolarisation (Lundt et al, 1994), cross-sectional microscopy (Abe et al, 1994;Kang et al, 2005;Mchedlidze et al, 1995;Pei et al, 1999;Zarudi and Zhang, 1996) and etching method (Tonshoff et al, 1990). However, these techniques either destroy the wafers or measure only localised areas instead of the whole wafer.…”