Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Abstract

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm−2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation

“…However, most studies mainly focus on the blue-violet wavelengths, and for the green band with important practical value, GaN-based VCSELs are developing slowly. Only a few institutions have achieved GaN-based green VCSELs, but with much lower output power than their blue and violet counterparts [6][7][8][9]. InGaN QWs grown along the c-axis [0001] direction are commonly used as the active region in GaN-based VCSELs.…”

III-Nitride Materials: Properties, Growth, and Applications

“…The EQE of InGaN red microLEDs has already reached 7.4%, demonstrating promise for application soon [43,44]. Blue and green InGaN lasers have also achieved inspiring performances [45,46]. Photonic integrated circuits with lower power consumption may alleviate the heat dissipation problem in computers.…”

Leveraging InGaN solar cells for visible light communication reception

“…Recent investigations have spotlighted third-generation solar cells like InGaN solar cells, driven by their potential for high conversion efficiency [36][37][38][39][40]. The InGaN alloy boasts versatile applications in photodetectors, electronic devices [41], and laser diodes [42]. A distinguishing feature of InGaN lies in its adjustable direct wide bandgap, spanning from 0.7 eV (InN) to 3.42 eV (GaN) [43].…”