Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature

Kasai, Junichi; Akimoto, R.; Hasama, Toshifumi; Ishikawa, Hiroshi; Fujisaki, Seiichiro; Tanaka, Shigehisa; Tsuji, S.

doi:10.1143/apex.4.082102

Cited by 43 publications

(24 citation statements)

References 12 publications

(13 reference statements)

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“…LDs with three different Cd alloy composition of 32, 39 and 42 % in BeZnCdSe active layer, corresponding latticemismatch of 2.1, 2.6, and 2.8%, respectively, were fabricated [12]. CW Lasing spectra in these LDs at 25 °C are shown in figure 7(a).…”

Section: Laser Characteristicsmentioning

confidence: 99%

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Continuous-wave operation of green/yellow laser diodes based on BeZnCdSe quantum wells

et al. 2013

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We have demonstrated continuous wave operation of BeZnCdSe quantum well laser diodes at room temperature in the green to yellow spectrum range. The laser diodes structures were grown by molecular beam epitaxy. To overcome low doping ability of a p-cladding layer materials of BeMgZnSe, a short-period superlattice of BeMgZnSe/ZnSe:N was employed. High-power lasing over 50mW at a peak wavelength of 536 nm was achieved. By employing highly strained BeZnCdSe quantum wells, continuous wave lasing up to 570 nm has been also achieved. The threshold current density of 20-μm-wide lasers was found to be sufficiently low (less than 0.85 kA/cm 2 ) in the wavelength range of 545 nm to 570 nm.

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Section: Laser Characteristicsmentioning

confidence: 99%

“…High-power lasing over 50mW at a peak wavelength of 536 nm was achieved. By employing highly strained BeZnCdSe quantum wells, cw lasing up to 570 nm has been achieved [10][11][12]. Figure 1 shows a layer structure for a green-yellow laser diode.…”

Section: Introductionmentioning

confidence: 99%

Continuous-wave operation of green/yellow laser diodes based on BeZnCdSe quantum wells

et al. 2013

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“…In fact, we successfully obtained CW lasing emission around 570 nm at room temperature from BeZnCdSe QW LDs. The details of their lasing characteristics are described elsewhere [14].…”

Section: Contributed Articlementioning

confidence: 99%

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

Kasai

Akimoto

Hasama

et al. 2011

Phys. Status Solidi C

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We have investigated the luminescent properties of highly strained BeZnCdSe quantum wells (QWs). Single‐QW structures were grown on (001) n‐GaAs substrates by molecular beam epitaxy with various Cd beam pressures. High‐resolution X‐ray diffraction measurements revealed that the lattice mismatch between the BeZnCdSe QW and the GaAs substrate changed from 2.1% to 3.0% as the Cd beam pressure was increased. The photoluminescence (PL) spectra showed that the peak wavelength was nearly proportional to the lattice mismatch for each sample. Fluorescence microscopy measurements revealed that the PL images of all the samples showed a similar luminescence distribution, but the images of samples having the lattice mismatch of 2.8% and 3.0% showed some dark lines. These results suggest that flat QW layers were formed in all the samples, but the lattice relaxation of the QW layer occurred in highly strained samples with lattice mismatches greater than 2.8%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…They lend themselves well to integration into compact, cheap and highly efficient systems. However, laser diodes emitting directly in the yellow-orange spectral region are so far limited to powers on the scale of a few mW, demonstrated in BeZnCdSe and InAlGaP devices 16,17 . In the near infrared (NIR), on the other hand, tapered laser diodes now exist that combine single-frequency operation with output powers up to 8 W at 1120 nm 18 , with longer wavelengths under development 19 .…”

Section: Introductionmentioning

confidence: 99%

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Hansen¹,

Christensen

Noordegraaf³

et al. 2017

SPIE Proceedings

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Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction-limited, single frequency operation with output powers up to 8 W near 1120 nm.We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

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Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature

Cited by 43 publications

References 12 publications

Continuous-wave operation of green/yellow laser diodes based on BeZnCdSe quantum wells

Continuous-wave operation of green/yellow laser diodes based on BeZnCdSe quantum wells

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

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