Green photoluminescence from Er-containing amorphous SiN thin films

Zanatta, A. R.; Nunes, Lorena Andrade

doi:10.1063/1.121568

Cited by 71 publications

(39 citation statements)

References 12 publications

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“…15,16 We have reported, for the first time, ferromagnetism above room temperature ͑RT͒ in Mn/ Si 3 N 4 multilayered films. 17 The structural and electronic properties of few samples were studied by x-ray absorption spectroscopy ͑XAS͒ and x-ray magnetic circular dichroism, indicating the presence of a distorted noncentrosymmetric Mn 3 N 2 phase with slightly shorter Mn-N distances, which was proposed to be the origin of the ferromagnetism in this system.…”

Section: Introductionmentioning

confidence: 99%

Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers

Céspedes

Román

Huttel

et al. 2009

Journal of Applied Physics

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Room temperature ferromagnetism has been obtained for different sets of Mn/ Si 3 N 4 multilayers prepared by sputtering. In order to find the most suitable conditions to stabilize the ferromagnetic ordering in this system, the evolution of the magnetic properties has been studied for films in which the Si 3 N 4 layer thickness was maintained constant while that of the Mn layer was varied, ͓Mn͑t m ͒ / Si 3 N 4 ͑3.4 nm͔͒ n , and conversely, in ͓Mn͑0.7 nm͒ / Si 3 N 4 ͑t sn ͔͒ 43 samples, in which the Mn layer thickness was kept constant while varying the Si 3 N 4 layer thickness. Structural, compositional, electronic and magnetic characterizations have been performed by means of x-ray reflectometry, Rutherford backscattering spectrometry, x-ray photoemission spectroscopy, x-ray absorption, and superconducting quantum interference device for further knowledge of the magnetic-structural relationship in this system. Our results show that the peculiar magnetic behavior of these films is mainly related to the stabilization of a slightly distorted Mn 3 N 2 phase that is induced by the Si 3 N 4 at the interfaces. For samples with larger Mn layer thickness, metallic Mn and Mn 3 N 2 phases coexist, which leads to a reduction of the total magnetization per Mn atom due to the presence of metallic Mn. For small Mn layer thickness ͑t m Ͻ 0.86 nm͒, where noncontinuous Mn 3 N 2 layers are formed, the magnetization decreases noticeably due to the superparamagnetic size limit. It has been found that the best conditions for the stabilization of the ferromagnetism in this system occur when both, the manganese-rich and the silicon nitride layers, are continuous and with similar thickness, close to 3.5 nm.

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Section: Introductionmentioning

confidence: 99%

Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers

Céspedes

Román

Huttel

et al. 2009

Journal of Applied Physics

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“…In order to be comparable, the doped films were identical (composition, thickness, thermal treatment) to the Er-and ErYb-doped spacer layers present in the OMCs. Whereas 488.0 nm photons can effectively (and quasi-resonantly [5]) excite the Er 3+ ions in the a-SiN films (Fig. 3), this is not the case for the OMCs.…”

Section: Resultsmentioning

confidence: 95%

“…The scenario started to change in the 1980's with the introduction of some innovative concepts and methods giving rise to the (nowadays) well-established Si photonics [3]. One of these promising concepts is the doping of Si with rare-earth (RE) ions leading to either nearinfrared or visible light emission [4,5]. The successful emission from RE-doped Si materials is noteworthy not only due to the efficient extraction of light from Si-based materials, but because triply ionized RE ions provide spectrally sharp photon radiation that is almost insensitive to temperature effects.…”

Section: Introductionmentioning

confidence: 99%

Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er^3+ and Yb^3+ ions

Gallo¹,

Braud²,

Zanatta³

2013

Opt. Express

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This work reports on the construction and spectroscopic analyses of optical micro-cavities (OMCs) that efficiently emit at ~1535 nm. The emission wavelength matches the third transmission window of commercial optical fibers and the OMCs were entirely based on silicon. The sputtering deposition method was adopted in the preparation of the OMCs, which comprised two Bragg reflectors and one spacer layer made of either Er-or ErYb-doped amorphous silicon nitride. The luminescence signal extracted from the OMCs originated from the 4 I 13/2 → 4 I 15/2 transition (due to Er 3+ ions) and its intensity showed to be highly dependent on the presence of Yb 3+ ions. According to the results, the Er 3+ -related light emission was improved by a factor of 48 when combined with Yb 3+ ions and inserted in the spacer layer of the OMC. The results also showed the effectiveness of the present experimental approach in producing Si-based light-emitting structures in which the main characteristics are: (a) compatibility with the actual microelectronics industry, (b) the deposition of optical quality layers with accurate composition control, and (c) no need of uncommon elementscompounds nor extensive thermal treatments. Along with the fundamental characteristics of the OMCs, this work also discusses the impact of the Er 3+ −Yb3+ ion interaction on the emission intensity as well as the potential of the present findings.

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“…Similar to III-N compounds such as GaN and AIN, Si 3 N 4 is also an excellent host material in terms of high dopant concentration, mechanical and thermal properties and chemical stabilities. It has been demonstrated that by introducing midgap levels into the wide band gap of 5.3 eV in nondoped Si 3 N 4 , the emission of green to ultraviolet light can be achieved [3][4][5][6]. The synthesis of Si 3 N 4 nanomaterials is of particular interest since they could be promising candidates for fabricating nanocomposites and electronic/optic nanodevices that can be operated at extreme conditions such as high temperatures, corrosive environments, high power and radiation environments.…”

Section: Introductionmentioning

confidence: 99%