Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching

Xiao, Huang; Zhang, C.; Tay, Chuan Beng; Venkatesan, T.; Chua, Soo Jin

doi:10.1063/1.4798240

Cited by 54 publications

(35 citation statements)

References 24 publications

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“…3,4 For instance, many researchers attributed the commonly observed green emission band (around 500-580 nm) of ZnO to various mechanisms, including V O , 10-15 V Zn , [16][17][18][19][20] Zn i , 21 O Zn , 22 V O -passivated acceptor impurities, 23 surface centers, 24 donor-acceptor complex, 25 and multiple aforementioned defect types 26 as well as extrinsic incorporation of Cu impurity. [27][28][29] In this letter, we report an in-depth study on origins of defect emissions in ZnO hybrid materials with singly precipitated ZnO crystals embedded in the glass surface via a non-equilibrium process. This kind of hybrid material is of technological importance in optoelectronics, but the detailed understanding of visible emission is still missing.…”

Section: Identification Of Defect-related Emissions In Zno Hybrid Matmentioning

confidence: 98%

Identification of defect-related emissions in ZnO hybrid materials

Niu

Zhu

Wang

et al. 2015

Applied Physics Letters

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Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam J. Appl. Phys. 113, 043506 (2013); 10.1063/1.4789010 Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres J.ZnO hybrid materials with singly precipitated ZnO nanocrystals embedded in the glass surface were fabricated by melt-quenching method followed by the annealing process. A series of samples containing different densities and species of intrinsic defects were obtained under different annealing conditions in a controllable manner, which was an ideal platform to identify the complicated defect origins. By employing photoluminescence (PL), excitation-dependent PL, PL excitation (PLE), and Raman spectroscopy, the radiative transitions of visible emission bands at around 401, 490, and 528 nm were unambiguously involved with zinc interstitial-related defect levels as initial states, and the corresponding terminal states were suggested to be valence band, oxygen vacancies, and zinc vacancies, respectively. This study may deepen the fundamental understanding of defectrelated emissions and physics in ZnO and benefit potential applications of ZnO hybrid materials in optoelectronics. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Identification Of Defect-related Emissions In Zno Hybrid Matmentioning

confidence: 98%

Identification of defect-related emissions in ZnO hybrid materials

Niu

Zhu

Wang

et al. 2015

Applied Physics Letters

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“…Besides the defect-induced enhancement of the PL intensity, the direct optical transitions associated with the excitons and bound excitons can contribute to an anomalous negative thermal quenching (NTQ) of the PL intensity in semiconductors. NTQ has been reported for various inorganic compound semiconducting materials such as ZnS, GaAs, Cu doped ZnO nanorods, ZnO-Al 2 O 3 core-shell structures [15][16][17][18]. Recently abnormal thermal quenching of PL has been observed for Te doped GaInP alloys somewhat in the high-temperature range 175 -300 K, which was attributed to the reduced energy separation between direct and indirect valleys due to the bandgap narrowing effect [19].…”

Section: Introductionmentioning

confidence: 99%

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

Tangi¹,

Shakfa²,

Mishra³

et al. 2017

Opt. Mater. Express

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Abstract:We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS 2 . For this study, MoS 2 layers were chemical vapor deposited on molecular beam epitaxial grown In 0.15 Al 0.85 N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS 2 , a thin In 0.15 Al 0.85 N cap layer was deposited on the MoS 2 /In 0.15 Al 0.85 N heterostructure. We confirm that the sandwiched MoS 2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS 2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 -400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS 2 . References and links1. H. J. Queisser and E. E. Haller, "Defects in semiconductors: some fatal, some vital," Science 281(5379), 945-950 (1998). 2. S. Nakamura, "The Roles of Structural Imperfections in InGaN-based Blue Light-Emitting Diodes and Laser Diodes," Science 281(5379), 956-961 (1998). 3. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS 2 transistors," Nat.Nanotechnol. 6(3), 147-150 (2011). Dadap, I. P. Herman, P. Sutter, J. Hone, and R. M. Osgood, Jr., "Direct measurement of the thickness-dependent electronic band structure of MoS 2 using angle-resolved photoemission spectroscopy," Phys.

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“…Here, we report the synthesis of the Cu-doped ZnO (Cu 4.4 Zn 95.6 O, atom %, or (with about 80−90 nm thickness, 180−300 nm width, and length up to several hundreds of micrometers. Novel phenomena, including PL quenching and correlating ferrimagwhich was different from the above reports [14][15][16]23,24. There is high strain (up to 1.98%) and shrunken lattice distortion (ΔV/ PXRD)] and nonstoichiometry (i.e., V O confirmed by X-ray photoemission), which were proposed as possible origins of ferrimagnetism.…”

mentioning

confidence: 80%

A Cu²⁺ ion–F Center Complex View on the Photoluminescence Quenching and Correlating Ferrimagnetism in (Cu₂⁺/Cu₁²⁺)_0.044Zn_0.956O Electrospun Nanobelts

Zeng

Wei

et al. 2014

ACS Appl. Mater. Interfaces

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Unlike to the most previous reports, mixed-cation Cu(+)/Cu(2+) doping-induced novel nanoscale phenomena, including photoluminescence quenching and a correlating ferrimagnetism with Néel temperature ≈ 14 K, were found in the as-calcined (Cu2(+)/Cu1(2+))0.044Zn0.956O electrospun nanobelts (NBs). There is also high strain (up to 1.98%) and shrunk lattice distortion (ΔV/V0 ∼ 0.127%) in the (Cu2(+)/Cu1(2+))0.044Zn0.956O NBs, leading to broken lattice symmetry in conjunction with nonstoichiometry (i.e., oxygen vacancies or accurate F centers), which could be possible origins of ferrimagnetism in the Cu-doped ZnO NBs. Electron paramagnetic resonance spectra reveal that there are giant and anisotropic g factors, suggesting that there is strong anisotropic spin-orbit interaction between the Cu(2+) ion and F center (i.e., forming Cu(2+)-F(+) complexes) in the (Cu2(+)/Cu1(2+))0.044Zn0.956O NBs. The above correlation enables the potential application of tuning of the optical and ferrimagnetic properties through strain and F-center engineering.

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Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching

Cited by 54 publications

References 24 publications

Identification of defect-related emissions in ZnO hybrid materials

Identification of defect-related emissions in ZnO hybrid materials

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

A Cu²⁺ ion–F Center Complex View on the Photoluminescence Quenching and Correlating Ferrimagnetism in (Cu₂⁺/Cu₁²⁺)_0.044Zn_0.956O Electrospun Nanobelts

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Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching

Cited by 54 publications

References 24 publications

Identification of defect-related emissions in ZnO hybrid materials

Identification of defect-related emissions in ZnO hybrid materials

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

A Cu2+ ion–F Center Complex View on the Photoluminescence Quenching and Correlating Ferrimagnetism in (Cu2+/Cu12+)0.044Zn0.956O Electrospun Nanobelts

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A Cu²⁺ ion–F Center Complex View on the Photoluminescence Quenching and Correlating Ferrimagnetism in (Cu₂⁺/Cu₁²⁺)_0.044Zn_0.956O Electrospun Nanobelts