Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

Lai, Shouqiang; Lai, Chaohsu; Li, Saijun; Chen, Guolong; Zheng, Xi; Lu, Tingwei; Wu, Rongxing; Lu, Yijun; Kuo, Hao‐Chung; Chen, Zhong; Wu, Tingzhu

doi:10.1109/led.2023.3264983

Cited by 4 publications

(1 citation statement)

References 23 publications

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“…[61] Lai et al compared the crystal quality and luminescence properties of MQWs with different prestrained structures, and green mini-LEDs displayed improved optoelectronic properties utilizing appropriate prestrained structure. [62] Zhao et al inserted SL to semipolar green LEDs and found an improvement in IQE due to the reduced point defect density. [63] The IQE improvement for semipolar LED with SL was not significant as its c-pane counterparts because extra misfit dislocations were introduced as nonradiative recombination centers.…”

Section: Prestrained Structurementioning

confidence: 99%

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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Over the last decades, continuous technological advancements have been made in III‐nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement of traditional light sources. With the emission wavelength covering the entire visible spectrum, InGaN LEDs find various applications such as solid‐state lightings, full‐color displays, and visible light communication. However, the quantum efficiency of InGaN LEDs suffers from a dramatic decline as the emission wavelength extends from blue to green–red region. This issue restrains the lighting and display applications based on the color‐mixing monolithic lighting source system. In this review, the recent breakthroughs in long‐wavelength InGaN LEDs, together with the challenges and approaches to realize high‐indium‐composition InGaN epilayers, are introduced. These cover the different epitaxial substrates, nucleation layers, and epitaxial structures, especially multiple quantum wells active region. The related studies are also discussed to improve the long‐wavelength LEDs performance from the aspect of crystal quality, growth orientation, carrier‐injection, and 3D nanostructures. Finally, current status and perspectives for future long‐wavelength LEDs development are proposed briefly.

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Section: Prestrained Structurementioning

confidence: 99%

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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Electroluminescence and temperature-dependent time-resolved photoluminescence of monolithically integrated triple-wavelength InGaN-based LED

Zhao,

Zhou

2023

Opt. Lett.

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Here, we propose a monolithically integrated triple-wavelength InGaN-based LED structure and conduct comprehensive research on its emission dynamics under electrical and optical excitation. Through experimental and numerical analyses, a carrier transport and a recombination process can be manipulated in bandgap-engineered multiple quantum wells (MQWs), thus realizing the manipulation of emission properties. A rational triple-wavelength LED structure is heteroepitaxially grown, which shows excellent color stability versus injected currents. Furthermore, utilizing the temperature-dependent time-resolved photoluminescence (TRPL), triple-wavelength peaks display different TRPL decay behaviors. Especially, an anomalous three-stage decay phenomenon is found for a low-energy peak measured at 10 K, accompanied by a decay profile transition with the increasing temperature. The underlying mechanisms are revealed and correlated with carrier localization, interaction between different QWs, and competition between radiative and nonradiative recombination.

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Fast and Massive Pixel-Level Morphology Detection by Imaging Processing for Inkjet Printing

Zhang,

Xu,

et al. 2024

Micromachines

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With the rapid development of the emerging intelligent, flexible, transparent, and wearable electronic devices, such as quantum-dot-based micro light-emitting diodes (micro-LEDs), thin-film transistors (TFTs), and flexible sensors, numerous pixel-level printing technologies have emerged. Among them, inkjet printing has proven to be a useful and effective tool for consistently printing micron-level ink droplets, for instance, smaller than 50 µm, onto wearable electronic devices. However, quickly and accurately determining the printing quality, which is significant for the electronic device performance, is challenging due to the large quantity and micron size of ink droplets. Therefore, leveraging existing image processing algorithms, we have developed an effective method and software for quickly detecting the morphology of printed inks served in inkjet printing. This method is based on the edge detection technology. We believe this method can greatly meet the increasing demands for quick evaluation of print quality in inkjet printing.

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Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs

Cited by 4 publications

References 23 publications

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Electroluminescence and temperature-dependent time-resolved photoluminescence of monolithically integrated triple-wavelength InGaN-based LED

Fast and Massive Pixel-Level Morphology Detection by Imaging Processing for Inkjet Printing

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