Green Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin Coating of Terbium Organic Compounds on Silicon

Ohzone, T.; Matsuda, T.; Hase, Souta; Nohara, Shingo; Iwata, Hideyuki

doi:10.1143/jjap.49.084102

Cited by 6 publications

(31 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…I G steeply increasing with V R was similar to that in the case of EL MOS devices fabricated by heavy Si implantation into SiO 2 12,13,16,36) and by spin-coating organic compound liquids on Si substrates. [31][32][33][34] Figure 2(b) shows the Fowler-Nordheim (FN) plots [i.e., log(I=V 2 ) vs 1=V plots] for the #0…”

Section: Methodsmentioning

confidence: 99%

“…Recently, we have fabricated MOS devices with Tb=Eusilicate-related oxides (Tb=Eu-Si-O) by the furnace annealing of a [Tb, (Tb + Ba)] and (Tb + Eu) organic compound film spin-coated on an n + -Si substrate, and they showed green and red ELs, 31,32) respectively. The simple fabrication process of spin-coating or ink-jet-printing organic compound mixtures on a silicon substrate, followed by thermal annealing, provides the possibility of realizing low-cost full-color displays.…”

Section: Introductionmentioning

confidence: 99%

“…The device structure is indium-tin oxide (ITO)=[(Ta + Ba) + Eu]-Si-O insulator layer=n + -Si substrate, similar to that in previous studies. [31][32][33][34] Current versus voltage (I G -V G ) characteristics, EL colors, and EL spectra are presented. The surface insulator layers are analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Matsuda

Hattori

Iwata

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n + -Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb 3+ /Eu 3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb 4 O 7 + Eu 2 O 3 ), [Tb 4 O 7 + Eu 2 O 3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb 3+ and Eu 3+ ions in the Tb 4 O 7 /Eu 2 O 3 layers resulting in EL emission from Tb 3+ and Eu 3+ intrashell transitions.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Matsuda

Hattori

Iwata

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The EL spectra were measured by a back-illuminated CCD camera stabilized at -70 °C with a monochromator under a constant current supply. The wavelength range from 290 to 1000 nm can be detected at once [3,4]. Fig.…”

Section: Mos El Devices and Measurement Setupmentioning

confidence: 99%

“…Recently, EL in ultraviolet (UV) through IR range from MOS devices with rare-earth elements were reported [1,2]. MOS devices fabricated with the spin-coated organic compound films of Tb/Eu showed the green and red EL [3,4].…”

Section: Introductionmentioning

confidence: 99%

UV and Visible range Electroluminescence from MOS Devices Fabricated by Spin-Coating of Gd/Dy Organic Compound Films on Silicon

Matsuda¹,

Saito²,

Iwata³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

View full text Add to dashboard Cite

show abstract

Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon

Ohzone¹,

Matsuda²,

Hase³

et al. 2011

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Current–voltage (I G–V G) characteristics and green/red electroluminescence (EL) from metal–oxide–semiconductor (MOS) devices with indium–tin oxide (ITO)/[(Tb/Ba–Si–O)/(Tb/Eu–Si–O)] layers/n+-Si substrate are reported. The (Tb/Ba–Si–O) and (Tb/Eu–Si–O) layers were fabricated from the mixtures of organic liquid sources of (Tb+Ba) and (Tb+Eu), respectively, which were spin-coated on the n+-Si substrate and annealed at 850 °C for 30 min in air. I G currents under EL emission correspond to Fowler–Nordheim (FN) tunnel current. The MOS devices with the (Tb/Ba)–Si–O layer and the (Tb/Eu)–Si–O layer emitted green and red EL, which originated from the intrashell transitions of 5D4–7F J (J = 6, 5, 4, and 3) of Tb3+ ions and 5D0–7F J (J = 1, 2, 3, and 4) of Eu3+ ions, respectively. EL intensity increased proportionally to I G to the n-th power, where n was about 1.3, and the EL spectra were independent of the currents. The oxide layers on the Si substrate for the green and the red devices have the total thicknesses of about 40 and 30 nm, which consist of [Tb2O3 and (Tb/Ba–Si–O)] and [Tb2O3/Eu2O3 and (Tb/Eu–Si–O)] mixtures, respectively.

show abstract

Green Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin Coating of Terbium Organic Compounds on Silicon

Cited by 6 publications

References 42 publications

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

UV and Visible range Electroluminescence from MOS Devices Fabricated by Spin-Coating of Gd/Dy Organic Compound Films on Silicon

Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon

Contact Info

Product

Resources

About