Green electroluminescence from AlN:Tb thin film devices on glass

Adachi, Daisuke; Kitaike, Ryohei; Ota, Jun; Toyama, Toshihiko; Okamoto, H.

doi:10.1007/s10854-007-9167-y

Cited by 8 publications

(3 citation statements)

References 9 publications

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“…7 F J whose wavelengths are 380 nm (J ¼ 6), 415 nm (J ¼ 5), 437 nm (J ¼ 4), and 460 nm (J ¼ 3). 6,7) These peaks are depicted at a magnification of 10 times. The CL intensity of the film with 500 C annealing is about 1.5 times larger than that of the film without annealing.…”

Section: Resultsmentioning

confidence: 98%

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Masumoto¹,

Semba²,

Kimura³

et al. 2011

Jpn. J. Appl. Phys.

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Inorganic electroluminescence (EL) devices have attracted attention because of their application in low-power-consumption displays. However, the operating voltage of inorganic EL devices is very high. We have investigated AlBNO films as host materials of the luminescence layer to lower the operating voltage. Moreover, the investigation used Tb as the luminescence center because Tb3+ ions show green luminescence that has a high luminous coefficient. Tb-doped AlBNO films were deposited by RF magnetron sputtering. Cathodoluminescence and photoluminescence show the luminescence due to f–f transition of Tb3+ ions. The luminescence can be attributed to both the energy transfer from the host material to the Tb3+ ions and the direct excitation of Tb3+ ions. In addition, we achieved a drastic increase in the luminescence by an annealing treatment due to an increase in Tb3+ ions and the homogeneous dispersion of Tb atoms. Therefore, AlBNO films could be used for inorganic EL devices.

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Section: Resultsmentioning

confidence: 98%

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Masumoto¹,

Semba²,

Kimura³

et al. 2011

Jpn. J. Appl. Phys.

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“…Furthermore, PLE of the 5 D 4 to 7 F 6 emission peak of the same samples did not exhibit any different shape as compared to the former one. It is well accepted that the shape of the CL spectrum is usually equivalent to that of the electroluminescence one [16][17][18][19][20].Thus the CL technique is useful for studying the RE emission without producing an electroluminescence device. In order to compare the relative emission efficiency between these two matrices under different power excitation values, we measured the CL spectra upon different beam currents (see fig.…”

Section: Resultsmentioning

confidence: 99%

Concentration Quenching of Tb³⁺ Doped SiC:H and AlN Thin Films in Photoluminescence and Cathodoluminescence Measurements

et al. 2013

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We present a systematic study of photo-and cathodoluminescence measurements in the visible of Terbium doped SiC:H and AlN thin films. The Terbium atomic concentrations vary from 0.9 to 10% for the SiC:H and from 0.8 to 6% for the AlN samples. For both materials the increase of the emission intensity with concentration and the subsequent quenching effect can be seen. The optimal concentration for the highest light emission is found. Photoluminescence excitation spectroscopy addresses the enhancement light emission mechanisms of the principal emission electronic transition of Terbium at ~542 nm.

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“…Regarding the latter issue, some research groups have demonstrated visible electroluminescent devices based on RE doped wide bandgap semiconductors [2][3][4][5]. Since a wide bandgap semiconductor is transparent to visible light it allows the output of the RE emission which can cover the colors blue (Tm), green (Tb), and red (Eu).…”

Section: Introductionmentioning

confidence: 99%

Concentration quenching and thermal activation of the luminescence from terbium‐doped a ‐SiC:H and c ‐AlN thin films

Guerra

Benz

Zanatta

et al. 2012

Phys. Status Solidi C

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The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c ‐AlN) and amorphous hydrogenated silicon carbide (a ‐SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb‐related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Green electroluminescence from AlN:Tb thin film devices on glass

Cited by 8 publications

References 9 publications

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Concentration Quenching of Tb³⁺ Doped SiC:H and AlN Thin Films in Photoluminescence and Cathodoluminescence Measurements

Concentration quenching and thermal activation of the luminescence from terbium‐doped a ‐SiC:H and c ‐AlN thin films

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Green electroluminescence from AlN:Tb thin film devices on glass

Cited by 8 publications

References 9 publications

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Concentration Quenching of Tb3+ Doped SiC:H and AlN Thin Films in Photoluminescence and Cathodoluminescence Measurements

Concentration quenching and thermal activation of the luminescence from terbium‐doped a ‐SiC:H and c ‐AlN thin films

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Concentration Quenching of Tb³⁺ Doped SiC:H and AlN Thin Films in Photoluminescence and Cathodoluminescence Measurements