Greatly reduced leakage current in BiFeO₃thin film by oxygen ion implantation

Abstract

Oxygen ions are implanted into BiFeO3 films on LaNiO3/SrTiO3(1 0 0) substrates. The evolution of films is characterized by x-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. The leakage current density of the implanted films is lowered by two orders of magnitude in comparison with unimplanted BFO films. The mechanisms for reduced leakage current in BiFeO3 thin films are discussed.

Dielectric anomalies due to grain boundary conduction in chemically substituted BiFeO3

“…For practical multifunctional applications of this material, it is essential to improve its multiferroic properties with low leakage currents. 11,12 This can be achieved by introducing suitable dopant ions at A and B sites in this material. A or B sites substitution in BFO can lead to reduction in leakage current, increase in resistivity, and enhancement in the ferroelectric and ferromagnetic properties.…”

Structural, magnetic and dielectric properties of nano-crystalline Ni-doped BiFeO3 ceramics formulated by self-propagating high-temperature synthesis

“…To overcome this problem, various approaches have been proposed, such as reduction in oxygen vacancies, domination of the ohmic conduction, and intergrain depletion in grain boundary limited conduction. The efforts have been made to reduce the leakage current density by either introducing dopants or using different fabrication methods [12][13][14][15][16]. At present, many researchers are engaged in the enrichment of multiferroic properties of BiFeO 3 -relevant materials, using different trivalent dopants such as La [17], Mn [18], Sm [19] and Ti [20].…”

Giant magnetoelectric coupling interaction in BaTiO3/BiFeO3/BaTiO3 trilayer multiferroic heterostructures

“…It has been already reported that oxygen vacancies rather than Fe 2þ contribute more to the leakage current. [20][21][22][23] Such process also results in creation of shallow level traps to electrons and this effect was further analyzed by studying the mechanism of current conduction involved in these films according to bulk limited and interface limited current conduction in ferroelectric thin films. [24][25][26] The conduction mechanisms in trilayer films were explored by logarithmic plots of the leakage current density versus applied electric field [log(J)/log(E)].…”