Greatly enhanced photocurrent in inorganic perovskite [KNbO3]0.9[BaNi0.5Nb0.5O3‐σ]0.1 ferroelectric thin‐film solar cell

Chen, Jian; Pei, Weijie; Chen, Guang; Zhang, Qingfeng; Lu, Yinmei; Huang, Haitao; Li, Mingkai; He, Yunbin

doi:10.1111/jace.15890

Cited by 29 publications

(17 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the across‐the‐band‐gap excitation was a transition from Ni 3 d to Nb 4 d states. LDA+ U calculations gave the band gap of 1.8 eV which was in good agreement with the values measured for this material in several experimental studies in the range from 1.4 to 2.0 eV . It was also found that the band gap and absorption features are quite sensitive to the composition and the preparation method, indicating that the Ni electronic structure is quite flexible and can be readily modified by small changes in the cation and oxygen stoichiometry.…”

Section: Introductionsupporting

confidence: 86%

First‐principles Studies of Band Gap Engineering in Ferroelectric Oxides

Grinberg

2020

Israel Journal of Chemistry

View full text Add to dashboard Cite

In the last decade there has been a resurgence of activity in the field of photoferroelectrics with a focus on the studies of oxides. Ferroelectric (FE) materials have a spontaneous switchable polarization that can lead to interesting light-matter interactions such as the bulk photovoltaic effect. While a wide range of compositions has been explored for ferroelectrics, until recently, FE oxides were considered to be capable of absorbing UV light only. Playing a key role in the advance of the field, first-principles calculations have guided the experimental materials discovery efforts that have identified a wide variety of visible-light-absorbing oxides. First-principles research efforts have also achieved considerable progress in revealing the interplay between the composition, structure and light absorption properties in these materials, and it is now understood that even small changes in the local environment can lead to large changes in band gap character and magnitude. Here, we survey the first-principles efforts following different band-gap engineering strategies and the advances in the computational methods that have been driven by these studies.

show abstract

Section: Introductionsupporting

confidence: 86%

First‐principles Studies of Band Gap Engineering in Ferroelectric Oxides

Grinberg

2020

Israel Journal of Chemistry

View full text Add to dashboard Cite

show abstract

“…In FE-based self-driven photodetectors, two mechanisms are usually responsible for separation and acceleration of photo-generated carriers. One is the depolarization electric field present across bulk FEs and the other is the Schottky barrier formed at interfaces between FEs and metal electrodes. , Recent works have demonstrated that FE-based photodetector device performance can be improved by coupling the PV and pyroelectric effects of the FE materials. ,− However, the responsivity ( R ) of this type of photodetector remains quite low, and the detectors work only in certain environments. Thus, there is an urgent need to improve the performance of FE-based photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive and Tunable Self-Powered UV Photodetectors Driven Jointly by p-n Junction and Ferroelectric Polarization

Chen

You

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (E dp) on the separation of photo-generated carriers. In this work, self-powered photodetectors based on both E dp and built-in electric field at the p-n junction (E p‑n) were designed to obtain enhanced device performance. A NiO/Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) heterojunction-based device is constructed to take advantage of energy level alignments that favor electron extraction. The device exhibits a tunable performance upon varying the polarization direction of PLZT. The NiO/PLZT heterojunction-based device with the PLZT layer in the poling down state shows a higher responsivity [R = (1.8 ± 0.12) × 10–4 A/W] and detectivity [D* = (3.69 ± 0.2) × 109 Jones], a faster response speed (τr = 0.34 ± 0.03 s, τd = 0.36 ± 0.02 s), and a lower dark current [I dark = (1.3 ± 0.19) × 10–12 A] under zero bias than the PLZT-based device because of the synergistic effects of E dp and E p‑n. Moreover, under weak-light illumination (0.1 mW/cm2), it exhibits even higher R [(6.3 ± 1.2) × 10–4 A/W] and D* [(1.29 ± 0.26) × 1010 Jones] values, which surpass those of most previously reported FE-based self-powered photodetectors. Our work emphasizes the role of the coupling effect between E p‑n and E dp in the photovoltaic process of NiO/PLZT heterojunction-based devices and provides an effective way to promote the self-powered UV photodetector applications.

show abstract

“…The influence of poling on the performance and charge separation in such devices is discussed. [ 67 ]…”

Section: Part Ii: Other Laser Methods For Pscsmentioning

confidence: 99%

“…The influence of poling on the performance and charge separation in such devices is discussed. [67] PSCs based on combining a [KNbO 3 ](0.9)[BaCo 0.5 Nb 0 . 5 O 3−δ ] (0.1) perovskite oxide as sensitizer with well-aligned TiO 2 Reproduced with permission.…”

Section: Figure 9 Clearly Illustrates the Interdependency Between Cry...mentioning

confidence: 99%

Laser Processing Methods for Perovskite Solar Cells and Modules

Brooks

Nazeeruddin

2021

Advanced Energy Materials

View full text Add to dashboard Cite

The perovskite photovoltaic technology is now transitioning from basic research to the pre‐industrialization phase. In order to achieve reliable and high‐performance commercial perovskite solar modules, high throughput manufacturing technologies must now be adapted to the specific constraints and requirements imposed by the perovskite solar cells unique new chemistries, film deposition methodologies, and encapsulation requirements. Laser technologies will play an important role in the industrialization of these devices, both to achieve high active surface area modules and for the deposition and/or treatment of the critical layers. Industrial lasers will be essential to achieve active areas greater than 95% of the total area to retain the benefits of the very high performances reported for <1 cm2 laboratory cells. The speed of laser processing for the preparation of interconnects is unrivalled by comparison to other structuring methods. Recent reports of the use of lasers in upscaling perovskite solar cells are presented and analyzed here.

show abstract

Greatly enhanced photocurrent in inorganic perovskite [KNbO₃]_0.9[BaNi_0.5Nb_0.5O_3‐σ]_0.1 ferroelectric thin‐film solar cell

Cited by 29 publications

References 25 publications

First‐principles Studies of Band Gap Engineering in Ferroelectric Oxides

First‐principles Studies of Band Gap Engineering in Ferroelectric Oxides

Highly Sensitive and Tunable Self-Powered UV Photodetectors Driven Jointly by p-n Junction and Ferroelectric Polarization

Laser Processing Methods for Perovskite Solar Cells and Modules

Contact Info

Product

Resources

About