Greater than 10 cm² V⁻¹ s⁻¹: A breakthrough of organic semiconductors for field‐effect transistors

Abstract

Organic semiconductors have been receiving intensive attention due to the specific advantages of low-temperature processing ability, low-fabrication cost, flexibility, and so forth. The charge carrier mobility of higher than 10 cm 2 V −1 s −1 for organic semiconductors is of great importance to be studied since it presents a future promising research direction toward commercial microelectronic applications. With the significant progress of the discovery of novel organic molecules and the further improvements of device fabrication technology, some organic molecules can break the limit of our knowledge and show very high mobilities. In this review, organic polymers and small molecules with mobilities above 10 cm 2 V −1 s −1 are first introduced to provide the readers with a general understanding of the features and characteristics of high-performance organic semiconductors. Then, some important parameters, including the molecular structures, the device configurations, and the performance, are discussed in detail. Finally, the clues to obtain high mobility are summarized, and the perspective toward the future possible research directions are also provided.

Revealing and Controlling Energy Barriers and Valleys at Grain Boundaries in Ultrathin Organic Films

“…[ 36 ] While this drop‐casting method in its current form is not suitable for large‐scale processing, it is sufficient for the current investigations where sample dimensions below 1 cm 2 are required. The high purity of the resulting films is comparable to recent works focusing on low‐dimensional organic crystals as the active layer in, e.g., OFETs, [ 37–40 ] and allows precise examination of the surface potential of individual grain boundaries. In particular, this allows detailed local electrostatic examination of grain boundaries and thereby enables identification of the mechanisms by which grain boundaries can affect charge transport.…”

Structures, Properties, and Device Applications for [1]Benzothieno[3,2‐b]Benzothiophene Derivatives

“…Organic semiconductors (OSCs) including organic small molecular semiconductors and polymer semiconductors have been one of the most significant topics in the last few decades due to controllably modified properties, intrinsically flexibility, relatively low‐cost, and large‐scale applications. [ 1–3 ] Organic small molecular semiconducting materials have many advantages as compared with conjugated polymer semiconductors. [ 4,5 ] The physical and chemical properties of organic small molecules can be effectively and easily controlled by adjusting functional groups and molecular structures.…”

Ultrathin P(NDI2OD‐T2) Films with High Electron Mobility in Both Bottom‐Gate and Top‐Gate Transistors

“…In particular, recent achievements of enhanced charge carrier mobility, current on/ off ratio, improved stability, and acceptably small threshold voltages are important milestones in the quest for developing commercially viable OFETs. [1,2] While not likely to challenge the performance of silicon transistors in computing applications, In general, mobilities exceeding 20 cm 2 V −1 s −1 were reported for OFETs employing well-controlled film morphology. [19][20][21] To achieve high OFET performance, it is critical to acquire optimized film microstructure near the polymer/dielectric interface.…”

“…In particular, recent achievements of enhanced charge carrier mobility, current on/off ratio, improved stability, and acceptably small threshold voltages are important milestones in the quest for developing commercially viable OFETs. [ 1,2 ] While not likely to challenge the performance of silicon transistors in computing applications, OFETs offer unique advantages in applications such as flexible and wearable electronics, [ 3 ] and transparent or translucent devices in display technology. [ 4 ] Each of these applications can be addressed by focusing not only on the materials used to fabricate OFETs, but also the fabrication methods to prioritize the large area and efficient fabrication of OFETs in the ultrathin (less than 10 nm) regime.…”