Grazing exit versus grazing incidence geometry for x-ray absorption near edge structure analysis of arsenic traces

Meirer, Florian; Pepponi, G.; Streli, Christina; Wobrauschek, P.; Zoeger, N.

doi:10.1063/1.3106086

Cited by 23 publications

(22 citation statements)

References 27 publications

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“…Based on these results, the same authors studied the applicability of the inverse TXRF geometry -the grazing exit (GE) set-up -to XANES analysis [50], because it was suggested that a normal incidence-grazing-exit geometry would not suffer from self-absorption effects in XAFS analysis due to the minimized path length of the incident beam through the sample. Their results proved this assumption and, in turn, confirmed the occurrence of the self-absorption effect for TXRF geometry.…”

Section: Sr-txrf-xafs Analysismentioning

confidence: 99%

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Meirer

Singh

Pianetta

et al. 2010

TrAC Trends in Analytical Chemistry

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Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) analysis is a high sensitive analytical technique that offers limits of detection in the femtogram range for most elements. Besides the analytical aspect, SR-TXRF is mainly used in combination with angle-dependent measurements and/or X-ray absorption near-edge structure (XANES) spectroscopy to gain additional information about the investigated sample. In this article, we briefly discuss the fundamentals of SR-TXRF and follow with several examples of recent research applying the above-mentioned combination of techniques to analytical problems arising from industrial applications and environmental research. ª

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Section: Sr-txrf-xafs Analysismentioning

confidence: 99%

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Meirer

Singh

Pianetta

et al. 2010

TrAC Trends in Analytical Chemistry

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“…[18] At SR sources, GEXRF can be combined in addition with X-ray absorption spectroscopy that allows to study, for example, the local electronic structure of implanted dopants. [8,19] SR enhances, thus significantly, the versatility of possible GEXRF applications.…”

Section: Gexrf Methodologymentioning

confidence: 99%

“…Consequently, GIXRF offers about one order of magnitude better detection limits for trace impurities compared with GEXRF. [8] However, GIXRF setups are not versatile with respect to the type of the primary beam, and it is not possible to combine them with wavelength-dispersive detection setups to profit from the advantages related to the high energy resolution offered by the latter.…”

Section: Introductionmentioning

confidence: 99%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.

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“…The performances of both grazing XRF techniques have previously been compared on a theoretical basis to evaluate the detection limits 21 and on an experimental basis by using a plate beamguide 22 or by studying arsenic traces on wafer surfaces. 23 The general conclusion from these studies is that, despite the better signal-to-background ratios offered by wavelength-dispersive GEXRF setups, GIXRF provides better detection limits because of the higher luminosity of grazing incidence setups. For Al surface contaminations on silicon, detection limits of 3.7 Â 10 12 cm À2 for GEXRF 24 and 2 Â 10 9 cm À2 for total-reflection XRF 25 (TXRF) were reported.…”

Section: Gixrf and Gexrfmentioning

confidence: 99%

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

Hönicke

Kayser

Beckhoff

et al. 2012

J. Anal. At. Spectrom.

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In this work two synchrotron radiation-based depth-sensitive X-ray fluorescence techniques, grazing incidence X-ray fluorescence (GIXRF) and grazing emission X-ray fluorescence (GEXRF), are compared and their potential for non-destructive depth-profiling applications is investigated. The depth-profiling capabilities of the two methods are illustrated for five aluminum-implanted silicon wafers all having the same implantation dose of 10 16 atoms per cm 2 but with different implantation energies ranging from 1 keV up to 50 keV. The work was motivated by the ongoing downscaling effort of the microelectronics industry and the resulting need for more sensitive methods for the impurity and dopant depth-profile control. The principles of GIXRF and GEXRF, both based on the refraction of X-rays at the sample surface to enhance the surface-to-bulk ratio of the detected fluorescence signal, are explained. The complementary experimental setups employed at the Physikalisch-Technische Bundesanstalt (PTB) for GIXRF and the University of Fribourg for GEXRF are presented in detail. In particular, for each technique it is shown how the dopant depth profile can be derived from the angular intensity dependence of the Al Ka fluorescence line. The results are compared to theoretical predictions and, for two samples, crosschecked with values obtained from secondary ion mass spectroscopy (SIMS) measurements. A good agreement between the different approaches is found proving that the GIXRF and GEXRF methods can be efficiently employed to extract the dopant depth distribution of ionimplanted samples with good accuracy and over a wide range of implantation energies.

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Grazing exit versus grazing incidence geometry for x-ray absorption near edge structure analysis of arsenic traces

Cited by 23 publications

References 27 publications

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

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