Gravitational Effects on Mixing and Growth Morphology of an In<sub>0.5</sub>Ga<sub>0.5</sub> System

Okitsu, Kazuhiko; Hayakawa, Y.; Yamaguchi, Tomuo; Kumagawa, Masashi; Hirata, Akira; Fujiwara, Syogo; Okano, Yasunori; Imaishi, Nobuyuki; Yoda, Shinichi; Oida, Toshihiko

doi:10.1002/crat.2170310803

Cited by 23 publications

(10 citation statements)

References 12 publications

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“…The project ions emerged out during the crystallization of InGaSb from its melt due to the reason that the density of lnGaSb liquid is larger than that of solid. These were similar to the projections observed in the melting and solidification experiment of In/GaSb/Sb done in I ML-2 [5]. The projections in this study were found to increase in size slowly.…”

Section: Formation Of Projiections During Ingasb Cry'stallizationsupporting

confidence: 89%

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Airplane and Drop Experiments on Crystallization of In_xGa_1−xSb Semiconductor under Different Gravity Conditions

et al. 2001

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Melting and crystallization experiments of InGaSb were done under the reduced gravity condition (102G) in an airplane and at the normal gravity condition (IG) in the laboratory. Crystallized InGaSb was found to contain many needle crystals in both the cases. Reduced gravity condition was found to be more conducive for crystal growth than the normal gravity condition. Formation of spherical projections on the surface of InGaSb during its crystallization was in-situ observed using a high speed CCD camera in the drop experiment. Spherical projections showed dependence of gravity during its growth. Indium compositions in the spherical projections were found to vary depending on the temperature.

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Section: Formation Of Projiections During Ingasb Cry'stallizationsupporting

confidence: 89%

“…In order to investigate the effect of gravity on the dissolution and crystallization processes, we carried out two microgravity experiments. The first one was performed in the Second International Microgravity Laboratory (IML-2) in 1994 [4][5][6][7]. We studied the effects of diffusion and convection on the melt mixing of In/GaSb/Sb.…”

Section: Introductionmentioning

confidence: 99%

Airplane and Drop Experiments on Crystallization of In_xGa_1−xSb Semiconductor under Different Gravity Conditions

et al. 2001

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“…15 Our group has also carried out microgravity experiments in a drop tower, space shuttle, and Chinese recoverable satellite in which the formation of a projection during solidification, needle crystal formation, growth morphology, composition distribution, and melt mixing were explained. [16][17][18] We analysed the effect of substrate orientation on the morphological change of the solid-liquid interface, and the orientation dependence of the step kinetic coefficient at the GaP/GaP interface was reported earlier. 19 A numerical model was developed to evaluate the effect of crystal orientation on the growth rate.…”

Section: Introductionmentioning

confidence: 99%

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

et al. 2016

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InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B.

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“…Okitsu et al (1996), for instance, have reported that the solutal Marangoni convection is effective for liquid mixing in microgravity. Duffar et al (1998) have demonstrated that the structural quality of InGaSb and GaSb crystals, grown in detached crucibles (no contact with the crucible wall), were improved under microgravity.…”

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A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

Mirsandi

Yamamoto

Takagi

et al. 2015

Microgravity Sci. Technol.

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In x Ga 1−x Sb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system. Nomenclaturevector in the vertical direction f interface position (m) g gravity acceleration (m · s −2 ) La latent heat (J · kg −1 ) m slope of the interface n unit vector normal to the interface p pressure (Pa) T temperature (K) u fluid velocity component in the horizontal direction (m · s −1 ) t time (s) v fluid velocity vector (m · s −1 ) v fluid velocity component in the vertical direction (m · s −1 ) x horizontal direction coordinate (m) y vertical direction coordinate (m) y + dimensionless wall distance (-) G acceleration normalised by gravity of Earth (m · s −2 )Greek symbols α thermal diffusivity (m 2 · s −1 ) β kinetics coefficient (m · s −1 ) β(0) kinetics coefficient at the unperturbed interface (m · s −1 ) β st kinetics coefficient of steps (m · s −1 ) β C solutal expansion coefficient (-) Microgravity Sci. Technol. β T thermal expansion coefficient (K −1 ) λ thermal conductivity (W · m −1 · K −1 ) μ viscosity (kg · m −1 · s −1 ) ρ density (kg · m −3 ) ν kinematic viscosity (m 2 · s −1 ) C concentration difference (-)

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Gravitational Effects on Mixing and Growth Morphology of an In_0.5Ga_0.5 System

Cited by 23 publications

References 12 publications

Airplane and Drop Experiments on Crystallization of In_xGa_1−xSb Semiconductor under Different Gravity Conditions

Airplane and Drop Experiments on Crystallization of In_xGa_1−xSb Semiconductor under Different Gravity Conditions

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

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Gravitational Effects on Mixing and Growth Morphology of an In0.5Ga0.5 System

Cited by 23 publications

References 12 publications

Airplane and Drop Experiments on Crystallization of InxGa1−xSb Semiconductor under Different Gravity Conditions

Airplane and Drop Experiments on Crystallization of InxGa1−xSb Semiconductor under Different Gravity Conditions

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

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Gravitational Effects on Mixing and Growth Morphology of an In_0.5Ga_0.5 System

Airplane and Drop Experiments on Crystallization of In_xGa_1−xSb Semiconductor under Different Gravity Conditions

Airplane and Drop Experiments on Crystallization of In_xGa_1−xSb Semiconductor under Different Gravity Conditions