Graphite strip rapid isothermal annealing of tantalum silicide

Li, B. Z.; Jones, Reese E.; Daneshvar, K.; Davis, J.G.

doi:10.1063/1.334060

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…Rapid thermal annealing has been applied successfully to the formation of both polycides (to homogenize the silicide) and salicides (to react the metal and form the silicide) of different metals. The sheet resistance and grain size of cosputtered MoSi2 (46) and TaSi2 (47,48) layers are comparable to those formed by furnace anneals; a sharp interface of the Ta with the poly-Si, as well as negligible Ta diffusion, has been reported. Even a reduction in surface roughening has been observed (49).…”

Section: July 1986mentioning

confidence: 56%

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

Brat

Osburn

Finstad

et al. 1986

J. Electrochem. Soc.

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Different aspects of the reaction between Ti and single‐crystal (100) Si are reported when the reaction is thermally activated by rapid thermal annealing. The sheet resistance variation of the TiSix film was measured for a wide range of annealing temperatures, from 400° to 1100°C, in two different atmospheres of high purity Ar and N2 gas, for bare and As‐implanted Si. At temperatures ⩾800°C, the only silicide formed was TiSi2 . Both cross‐sectional TEM and RBS results indicate that the amount of titanium consumed in the reaction depends strongly on the atmosphere used for silicidation. Argon makes possible the reaction of almost the whole Ti layer with silicon, while nitrogen leaves an unreacted layer of about 15 nm, independent of the thickness of the original film. A two‐step anneal is necessary to eliminate bridging in a patterned oxide structure. No difference was observed in the roughness of the external surface whether the samples were annealed in Ar or in N2 . No significant enhanced diffusion of As into Si was observed near the normalSi/TiSi2 interface after RTA in an Ar ambient, while a redistribution of As into the silicide takes place. The As piles up at the TiSi2 surface, from which it evaporates at high temperatures. Results of furnace‐annealed samples in N2 atmosphere show a pile‐up of As at the normalSi/TiSi2 and the TiSi2/normalambient atmosphere interfaces, where it evaporates from the latter, at high temperatures.

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Section: July 1986mentioning

confidence: 56%