Graphite Behavior During a gas Phase Method for Aluminum Nitride Preparation

Abstract

Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with different types of graphite, the effect of fluorides on final synthesis product is revealed, and chemical aspects of their reaction with graphite during AlN synthesis are explained. The possibility is established of creating a protective coating on graphite made of chemically deposited AlN. Calculated and experimental data are obtained for developing a modernized industrial test unit for preparing high purity fine AlN.