Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

Stelzer, Max; Jung, Moritz; Kreupl, Franz

doi:10.1109/jeds.2017.2724841

Cited by 6 publications

(12 citation statements)

References 47 publications

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“…The duration between two subsequent pulses could not be chosen arbitrary small as the device needs a certain time to cool down to room temperature. The CVD-C-Si, deposited at much higher temperature (1000 • C), already showed an over 100 million times better reliability than TiSi-Si [10], [11], which in turn implies that CN-Si outperforms the reliability of CVD-C-Si, as shown in Fig. 8(b), by a factor of over three.…”

Section: Sputtered Carbon-silicon Reliabilitymentioning

confidence: 91%

“…The probability of a possible damage to the diode is reduced when the pulses have a lower current density as the power density is proportional to j 2 (see in (1)). For 1.35 MA/cm 2 , which is slightly above the permissible pulse load of 1.21 MA/cm 2 specified by the manufacturer, the diode is able to withstand up to one million events, but the failure probability is spread over a wide range [10], [11].…”

Section: Tisi-si Interface Reliabilitymentioning

confidence: 96%

“…A damaged or deteriorated diode can be identified by monitoring the characteristics of the Schottky diode at a fixed reverse bias voltage. A degradation of the properties shows up as an increased reverse leakage current [11]. The reliability of the devices, and consequently of the metal-semiconductor interface, is often investigated with a high voltage or current pulse, like shown in Fig.…”

Section: Schottky Diode Test Vehiclementioning

confidence: 99%

“…4(a). This enables a direct comparison of SC-Si and CN-Si to TiSi-Si and CVD-C-Si [11]. The substrates were prepared by ultrasonic cleaning in acetone and isopropyl alcohol before a full RCA clean.…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…We reported earlier [10], [11] that a CVD-deposited GC contact to silicon (CVD-C-Si) has similar electrical properties as TiSi-Si but a much higher temperature stability and a more than 100 million times improved stability against ESD current pulses. Unfortunately, the deposition temperatures of 850 • C -1000 • C are not compatible with many applications where temperature budget restrictions of about 400 • C for middle and back end of line (MOL/BEOL) of advanced nodes are in place.…”

Section: Introductionmentioning

confidence: 99%

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Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Stelzer

Jung

Wurstbauer

et al. 2019

IEEE J. Electron Devices Soc.

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Titanium silicide (TiSi) contacts are frequently used metal-silicon contacts but are known to diffuse into the active region under high current density stress pulses. Recently, we demonstrated that graphenic carbon (GC) deposited by CVD at 1000 • C on silicon has the same low Schottky barrier as TiSi, but a much improved reliability against high current density stress pulses. In this paper, we demonstrate now that the deposition of GC is possible at 100 • C − 400 • C by a sputter process. We show that the sputtered carbon-silicon contact is over 1 billion times more stable against high current density pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. SC can be doped by nitrogen (CN) and this results in an even lower resistivity and improved stability. Scalability of the CN thickness down to 5 nm is demonstrated. The finding that there is a low temperature approach for using the excellent carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a vast number of other applications.

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Section: Sputtered Carbon-silicon Reliabilitymentioning

confidence: 91%

Section: Tisi-si Interface Reliabilitymentioning

confidence: 96%

Section: Schottky Diode Test Vehiclementioning

confidence: 99%

Section: Electrical Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Stelzer

Jung

Wurstbauer

et al. 2019

IEEE J. Electron Devices Soc.

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Resistive switching and transport characteristics of an all-carbon memristor

Raeber

Zhao

Murdoch

et al. 2018

Carbon

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Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon

Pham

Tran

et al. 2018

Semicond. Sci. Technol.

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Graphitic contacts to semiconductors have been shown to provide highly rectifying currentvoltage characteristics coupled with high thermal/chemical stability. Energetically deposited graphitic contacts to p-type Si have exhibited rectification ratios (at ±1.0 V) up to 10 6 :1 and ideality factors approaching unity. Here, we report temperature dependent current-voltage (I-V-T) measurements performed on such devices. The measurements and subsequent analysis show that during energetic carbon deposition, deleterious oxide/contaminants are removed from the Si substrate surface. The Richardson constant of the p-type Si extracted from the I-V-T measurements agrees with the theoretical value, indicating that the surface contaminants are removed without significant damage to the underlying Si. Therefore, by energetic deposition of C on Si, C-Si junctions can be formed with low lateral inhomogeneity and low interface defect density. These attributes of the junctions enable the observed near-ideal Schottky diode characteristics.

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Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

Cited by 6 publications

References 47 publications

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Resistive switching and transport characteristics of an all-carbon memristor

Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon

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