2017
DOI: 10.1109/jeds.2017.2724841
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Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

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Cited by 6 publications
(12 citation statements)
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“…The duration between two subsequent pulses could not be chosen arbitrary small as the device needs a certain time to cool down to room temperature. The CVD-C-Si, deposited at much higher temperature (1000 • C), already showed an over 100 million times better reliability than TiSi-Si [10], [11], which in turn implies that CN-Si outperforms the reliability of CVD-C-Si, as shown in Fig. 8(b), by a factor of over three.…”
Section: Sputtered Carbon-silicon Reliabilitymentioning
confidence: 91%
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“…The duration between two subsequent pulses could not be chosen arbitrary small as the device needs a certain time to cool down to room temperature. The CVD-C-Si, deposited at much higher temperature (1000 • C), already showed an over 100 million times better reliability than TiSi-Si [10], [11], which in turn implies that CN-Si outperforms the reliability of CVD-C-Si, as shown in Fig. 8(b), by a factor of over three.…”
Section: Sputtered Carbon-silicon Reliabilitymentioning
confidence: 91%
“…The probability of a possible damage to the diode is reduced when the pulses have a lower current density as the power density is proportional to j 2 (see in (1)). For 1.35 MA/cm 2 , which is slightly above the permissible pulse load of 1.21 MA/cm 2 specified by the manufacturer, the diode is able to withstand up to one million events, but the failure probability is spread over a wide range [10], [11].…”
Section: Tisi-si Interface Reliabilitymentioning
confidence: 96%
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