Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Song, Yuqing; Zou, Wentao; Lu, Qi; Lin, Li; Liu, Zhongfan

doi:10.1002/smll.202007600

Cited by 79 publications

(61 citation statements)

References 76 publications

(151 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Monolayer graphene pieces of size 1.3 cm × 1.3 cm were transferred onto the as-grown GaN/sapphire templates using a wet transfer procedure, described elsewhere [ 25 ]. Since graphene transfer might result in the formation of defects [ 19 , 20 , 21 ], the surface of the transferred graphene layer was checked by SEM. While most of the graphene layer surface was smooth, some wrinkles and possible few-layer zones were observed ( Figure 1 a).…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, to ensure interaction between the substrate and the epilayer, the graphene interlayer thickness must not exceed two monolayers [ 1 , 9 , 11 ], which restrains the graphene layer to either monolayer or bilayer thickness. Meanwhile, depending on the transfer method, cracks, wrinkles, residue, and contamination might decrease the quality of the graphene layer [ 19 , 20 , 21 ], and significantly affect the epilayer growth.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

et al. 2022

View full text Add to dashboard Cite

The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

et al. 2022

View full text Add to dashboard Cite

show abstract

“…The conventional graphene transfer process should include the coating of the transfer medium on graphene surface, the delamination of graphene from the growth substrates, the lamination of graphene onto target substrates, and the removal of the transfer medium. [20] Owing to the high flexibility of graphene, the as-grown graphene would copy the surface structure of underlying Cu substrates to form a conformal contact. After the removal of Cu substrates, the graphene would only contact with the transfer medium.…”

Section: Resultsmentioning

confidence: 99%

Transfer‐Enabled Fabrication of Graphene Wrinkle Arrays for Epitaxial Growth of AlN Films

et al. 2021

Self Cite

View full text Add to dashboard Cite

modify graphene properties, is promising for many applications. [3][4][5][6] In this regard, as an efficient approach to tune surface and optical properties, [3] and to alter the chemical reactivity due to the presence of strong strain, [7][8][9] graphene wrinkle can be formed by the collapsing or the folding of graphene geometrically. [10] Furthermore, free of dangling bonds, graphene is an ideal buffer layer for the epitaxial growth of functional materials, which is, however, strongly hindered by the difficulty of surface nucleation. [11,12] With enhanced reactivity, graphene wrinkles would function as the nucleation centers, and facilitate the rapid growth of epitaxial layers. Therefore, to periodically modify the properties and reactivity of graphene, the controllable formation of graphene wrinkle arrays with a high density and defined orientations is highly important. Applying the tension and compression loading [13,14] or substrate engineering [15,16] can be employed to fabricate the wrinkle arrays; however, the target substrates are limited to be the soft ones, such as polymer.Formation of graphene wrinkle arrays can periodically alter the electrical properties and chemical reactivity of graphene, which is promising for numerous applications. However, large-area fabrication of graphene wrinkle arrays remains unachievable with a high density and defined orientations, especially on rigid substrates. Herein, relying on the understanding of the formation mechanism of transfer-related graphene wrinkles, the graphene wrinkle arrays are fabricated without altering the crystalline orientation of entire graphene films. The choice of the transfer medium that has poor wettability on the corrugated surface of graphene is proven to be the key for the formation of wrinkles. This work provides a deep understanding of formation process of transferrelated graphene wrinkles and opens up a new way for periodically modifying the surface properties of graphene for potential applications, including direct growth of AlN epilayers and deep ultraviolet light emitting diodes.

show abstract

“…More specifically, top-down methods mainly include micromechanical exfoliation and liquid phase exfoliation methods, [15,[33][34][35][36][37][38][39][40][41][42] while bottom-up methods generally include chemical vapor deposition (CVD) and hydrothermal/solvothermal methods. [43][44][45][46][47][48][49][50][51][52][53] In earlier studies of 2D material, the preparation of 2D nanosheets for fundamental property investigation and functional device fabrication is highly relied on the micromechanical exfoliation. [15] Because the in-plane chemical bonds in 2D materials are much stronger than the interlayer bonds, it is possible to exfoliating their bulk materials down to monolayer limits.…”

Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning

confidence: 99%

Perspectives of 2D Materials for Optoelectronic Integration

Zhao

Zhang

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

2D materials show wide-ranging physical properties with their electronic bandgaps varying from zero to several electronvolts, offering a rich platform to explore novel electronic and optoelectronic functions. Notably, atomically thin 2D materials are well suited for integration in optoelectronic circuits, because of their ultrathin body, strong light-matter interactions, and compatibility with the current silicon photonic technology. In this paper, an overview of the state of the art of using 2D materials in optoelectronic devices and integration is provided. The optoelectronic properties of 2D materials and their typical electronic and optoelectronic applications including light sources, optical modulators, photodetectors, field-effect transistors, and logic circuits are summarized. The device configurations, operation mechanisms, and device figures-of-merit are introduced and discussed. By discussing the recent advances, future trends, and existing challenges of 2D materials and their optoelectronic devices, this review has provided an insight into the perspectives of 2D materials for optoelectronic integration and may guide the development of this field within the research community.

show abstract

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Cited by 79 publications

References 76 publications

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Transfer‐Enabled Fabrication of Graphene Wrinkle Arrays for Epitaxial Growth of AlN Films

Perspectives of 2D Materials for Optoelectronic Integration

Contact Info

Product

Resources

About