Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

Zhang, R.; Zhang, Z.D.; Wang, Z.S.; Zhou, Shangru; Wang, Z.; Li, T.C.; Liu, J.R.; Fu, Dejun

doi:10.1016/j.nimb.2015.04.067

Cited by 16 publications

(9 citation statements)

References 13 publications

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“…17 Recently, small clusters of C 6 were proposed to reduce graphitization temperature for graphene synthesis on a 6H-SiC substrate. 18 To the best of our knowledge, presently there is a lack of publications on solid-state cluster implantation into semiconductors, especially for SiC. In this work, we show advantages of the aluminum implantation, such as high stopping power, and the cluster effect (reduced energy per atom in the cluster) for further reduction of the implantation depth.…”

Section: Introductionmentioning

confidence: 76%

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Small Al cluster ion implantation into Si and 4H‐SiC

Zeng

Pelenovich

Ieshkin

et al. 2019

Rapid Comm Mass Spectrometry

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Rationale Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. Methods In this study to carry out low‐energy implantation into single crystalline silicon and 4H‐SiC samples we employ Aln− (n = 1–5) clusters with energy in the range of 5–20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS; IONTOF TOF.SIMS‐5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. Results A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. Conclusions The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF‐SIMS depth profiling of the shallow cluster implantation is feasible.

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Section: Introductionmentioning

confidence: 76%

“…Al and B are mostly used as p‐type dopants, and Al has the advantage of small redistribution after thermal annealing . Recently, small clusters of C 6 were proposed to reduce graphitization temperature for graphene synthesis on a 6H‐SiC substrate …”

Section: Introductionmentioning

confidence: 99%

Small Al cluster ion implantation into Si and 4H‐SiC

Zeng

Pelenovich

Ieshkin

et al. 2019

Rapid Comm Mass Spectrometry

View full text Add to dashboard Cite

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“…It also finds numerous applications in the fields of electronics, automobile parts, foundry and jewellery. It has recently been used to synthesise graphene by graphitisation at high temperatures [128]. In the review by Rountree et al [129], developments in the molecular dynamics simulations in the crack propagation in brittle materials until 2002 were discussed.…”

Section: Brittle Materials—advances In Fracture Study At Nanoscalementioning

confidence: 99%

A Review on Brittle Fracture Nanomechanics by All-Atom Simulations

Patil

Heider

2019

Nanomaterials

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Despite a wide range of current and potential applications, one primary concern of brittle materials is their sudden and swift collapse. This failure phenomenon exhibits an inability of the materials to sustain tension stresses in a predictable and reliable manner. However, advances in the field of fracture mechanics, especially at the nanoscale, have contributed to the understanding of the material response and failure nature to predict most of the potential dangers. In the following contribution, a comprehensive review is carried out on molecular dynamics (MD) simulations of brittle fracture, wherein the method provides new data and exciting insights into fracture mechanism that cannot be obtained easily from theories or experiments on other scales. In the present review, an abstract introduction to MD simulations, advantages, current limitations and their applications to a range of brittle fracture problems are presented. Additionally, a brief discussion highlights the theoretical background of the macroscopic techniques, such as Griffith’s criterion, crack tip opening displacement, J-integral and other criteria that can be linked to the fracture mechanical properties at the nanoscale. The main focus of the review is on the recent advances in fracture analysis of highly brittle materials, such as carbon nanotubes, graphene, silicon carbide, amorphous silica, calcium carbonate and silica aerogel at the nanoscale. These materials are presented here due to their extraordinary mechanical properties and a wide scope of applications. The underlying review grants a more extensive unravelling of the fracture behaviour and mechanical properties at the nanoscale of brittle materials.

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“…Many scholars have worked on the positive impact of ion beam irradiation on nanostructured materials, Ye et al 25 stated that light ion of few hundreds keV to few MeV functionalizes 2D to 3D nanostructured network of materials, Zhang et al 26 produced large‐scale graphene by implanting negatively charged carbon ions beam on nickel foils (foam) and drying the foil thereafter. Ion beam irradiations doping has been used to enhance the optical and electrical properties of semiconductor materials, 27 reshaping of nanowires, 28 enhancement of optical properties such as band gap energies of semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Transformation of GO to rGO due to 8.0 MeV carbon (C++) ions irradiation and characteristics performance on MnO ₂ –NiO–ZnO @ GO electrode

et al. 2020

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Summary The effect of 8.0 MeV carbon ions (C++) radiations on features and performances of MnO2–NiO–ZnO@GO electrodes (thin films). MnO2–NiO–ZnO@GO thin films were produced using the hydrothermal technique. 8.0 MeV carbon ions (C++) with doses of 2.25 × 1015, 5.0 × 1015, 7.5 × 1015 and 1.0 × 1016 ions/cm2 were irradiated on MnO2–NiO–ZnO@GO thin films. The XRD spectra indicate crystalline nature of the films while SEM images show rod‐like structures. The XRD calculated crystallite sizes varied from 1.24 to 5.58 nm. Energy‐dispersive X‐ray spectroscopy, Proton induced X‐ray emission (PIXE) and Rutherford back scattering (RBS) analysis are used to evaluate the elemental compositions of samples. Optical studies show reduced bandgap energies of various oxides due to the addition of graphene oxide. The electrochemical studies obtained a specific capacitance of 1627 and 1960 F/g for electrodes illuminated with radiation doses of 5.0 × 1015 and 7.5 × 1015 ions/cm2, respectively. Results indicate that carbon ion irradiation with low doses improved the performances of the nanostructured thin films while radiation with high doses induces adverse disorder and flaw to the MnO2–NiO–ZnO@GO thin film properties. These results show that ion beam irradiation is a useful tool to enhance or damage the properties of nanostructured materials depending on the dosages radiation beamed on the material.

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Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

Cited by 16 publications

References 13 publications

Small Al cluster ion implantation into Si and 4H‐SiC

Small Al cluster ion implantation into Si and 4H‐SiC

A Review on Brittle Fracture Nanomechanics by All-Atom Simulations

Transformation of GO to rGO due to 8.0 MeV carbon (C++) ions irradiation and characteristics performance on MnO ₂ –NiO–ZnO @ GO electrode

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Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

Cited by 16 publications

References 13 publications

Small Al cluster ion implantation into Si and 4H‐SiC

Small Al cluster ion implantation into Si and 4H‐SiC

A Review on Brittle Fracture Nanomechanics by All-Atom Simulations

Transformation of GO to rGO due to 8.0 MeV carbon (C++) ions irradiation and characteristics performance on MnO 2 –NiO–ZnO @ GO electrode

Contact Info

Product

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About

Transformation of GO to rGO due to 8.0 MeV carbon (C++) ions irradiation and characteristics performance on MnO ₂ –NiO–ZnO @ GO electrode