Graphene–semiconductor heterojunction sheds light on emerging photovoltaics

Behura, Sanjay K.; Wang, Chen; Wen, Yintang; Berry, Vikas

doi:10.1038/s41566-019-0391-9

Cited by 106 publications

(81 citation statements)

References 34 publications

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“…In particular, the most advanced infrared (IR) photodetector at optical communication waveband (1300–1650 nm) is of great significance, because it has a wide range of applications in the fields of military, information communication, and imaging . At present, two dimensional (2D) materials, due to their externally tunable bandgap and bound photoelectric properties, such as graphene, 2D transition metal dihalides (TMDs), and black phosphorus (BP), are becoming new stars in the field of telecommunications optical detection .…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi2Se3 is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi2Se3 thin films are rarely reported. Here, a 3D TI Bi2Se3/MoO3 thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (Ri), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405–1550 nm). The highest on–off ratio of the optimized device can reach up to 5.32 × 104. Ri, D*, and the EQE can reach 1.6 × 104 A W−1, 5.79 × 1011 cm2 Hz1/2 W−1, and 4.9 × 104% (@ 405 nm), respectively. Surprisingly, the Ri can achieve 2.61 × 103 A W−1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 µs), which is two orders of magnitude faster than that of other TIs‐based devices. In addition, the device demonstrates brilliant long‐term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high‐performance photodetectors in the optical communication, military, and imaging fields.

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Section: Introductionmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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“…Two‐dimensional (2D) graphene with its single‐atomic‐layer thickness offers superior electronic, optical, and mechanical properties 1–3. The integration of graphene with semiconductor materials has been proposed to enable construction of a 2D/three‐dimensional (3D) junction on the semiconductor surface that would enable carrier transport across the 2D/semiconductor interface with continued innovation in terms of the device physics 4–8. Recently, a type of hybrid graphene/semiconductor photodetector was developed successfully with ultrahigh responsivity and sensitivity by transferring either chemical vapor deposition (CVD)‐grown or exfoliated graphene layers onto the semiconductor substrates 9,10.…”

Section: Introductionmentioning

confidence: 99%

Interface‐Induced High Responsivity in Hybrid Graphene/GaAs Photodetector

Tian

Liu

et al. 2020

Advanced Optical Materials

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Photodetectors based on two‐dimensional (2D)/ three‐dimensional (3D) semiconductor heterojunction structures are emerging as appealing candidates for high‐sensitivity applications. The performances of these hybrid photodetectors are closely correlated with their current gain mechanism. Carrier recirculation is the most commonly reported mechanism. Recently, a Fermi level alignment mechanism was proposed for 2D graphene/0‐dimensional (0D) quantum dot heterostructures because of the easy Fermi level tunability of the quantum dot. In this article, an interface‐induced gain mechanism using this Fermi level alignment process is proposed and identified based on a 2D graphene/3D GaAs hybrid structure with comparative measurement configurations. Because of the high surface state density of GaAs, the photo‐excited holes tend to become trapped at the graphene/GaAs interface, which can easily lower the interface Fermi level and the Fermi level in graphene via an alignment process. When combined with the high carrier mobility characteristics of graphene, a maximum current gain of 2520 and responsivity of 1321 A W−1 are achieved in the devices. This study clarifies the role of the interface states in the gain characteristics of some 2D/3D hybrid devices, with results that are instructive for optimal device design.

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“…Engineering approaches for PV with enhanced performance include interfacial incorporation of 2D active interlayers such as graphene and TMDC, optimization of GRM's doping and surface functionalization, and also the possibility of inserting passivation layers such as 2D insulating crystals towards 2D semiconductor/2D insulator/ 3D semiconductor architectures. 18,118,[190][191][192] 3.2 Enhanced strain-charge coupling and electrification in GRM for mechanical energy harvesting Piezoelectric properties. Mechanical energy harvesting is a promising functionality suitable for either powering miniature IoT devices or even allow for large-scale energy harvesting upon multiple devices integration.…”

Section: Grms As a Gigantic Playground For Energy Conversion Technologiesmentioning

confidence: 99%

Up-scalable emerging energy conversion technologies enabled by 2D materials: from miniature power harvesters towards grid-connected energy systems

Rogdakis

Karakostas

Kymakis

2021

Energy Environ. Sci.

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Graphene–semiconductor heterojunction sheds light on emerging photovoltaics

Cited by 106 publications

References 34 publications

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Interface‐Induced High Responsivity in Hybrid Graphene/GaAs Photodetector

Up-scalable emerging energy conversion technologies enabled by 2D materials: from miniature power harvesters towards grid-connected energy systems

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Graphene–semiconductor heterojunction sheds light on emerging photovoltaics

Cited by 106 publications

References 34 publications

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Interface‐Induced High Responsivity in Hybrid Graphene/GaAs Photodetector

Up-scalable emerging energy conversion technologies enabled by 2D materials: from miniature power harvesters towards grid-connected energy systems

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Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband