Graphene Produced by Radiation-Induced Reduction of Graphene Oxide

Kumar, Prashant; Subrahmanyam, K. S.; Rao, C. N. R.

doi:10.1142/s0219581x11008824

Cited by 107 publications

(71 citation statements)

References 23 publications

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“…This was done so that any changes in the material are attributed solely to room temperature effects and not by other causes such as exposure to ultraviolet radiation [36][37][38].…”

Section: Identifying Carbonyls and Carboxyls In The O 1s Spectramentioning

confidence: 99%

Identification of functional groups and determination of carboxyl formation temperature in graphene oxide using the XPS O 1s spectrum

Ng²,

2015

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“…This was done so that any changes in the material are attributed solely to room temperature effects and not by other causes such as exposure to ultraviolet radiation [36][37][38].…”

Section: Identifying Carbonyls and Carboxyls In The O 1s Spectramentioning

confidence: 99%

Identification of functional groups and determination of carboxyl formation temperature in graphene oxide using the XPS O 1s spectrum

Ng²,

2015

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“…The Hummers approach is the most commonly used procedure today to obtain GO, although many variations with small modifications exist. For the reduction step, methods available encompass thermal annealing, electrochemical reduction (18), irradiation (19), and chemical reduction. The last category itself is highly varied, using a plethora of traditional reducing agents, such as hydrazine (20), sodium borohydride (21), and lithium aluminum hydride (22); more unconventional greener agents, like reducing sugars (23) and tea solution (24), have been used as well.…”

mentioning

confidence: 99%

Synthetic routes contaminate graphene materials with a whole spectrum of unanticipated metallic elements

Wong

Sofer²,

Kubešová

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

144

118

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The synthesis of graphene materials is typically carried out by oxidizing graphite to graphite oxide followed by a reduction process. Numerous methods exist for both the oxidation and reduction steps, which causes unpredictable contamination from metallic impurities into the final material. These impurities are known to have considerable impact on the properties of graphene materials. We synthesized several reduced graphene oxides from extremely pure graphite using several popular oxidation and reduction methods and tracked the concentrations of metallic impurities at each stage of synthesis. We show that different combinations of oxidation and reduction introduce varying types as well as amounts of metallic elements into the graphene materials, and their origin can be traced to impurities within the chemical reagents used during synthesis. These metallic impurities are able to alter the graphene materials' electrochemical properties significantly and have wide-reaching implications on the potential applications of graphene materials.

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“…Another option is to locally reduce and pattern graphite oxides (GO) by using laser ablation [13]. In fact high intensity laser beams (of the order of 10 10 W/cm 2 ) induce change in the composition (due to hydrogen, oxygen and other impurities vaporisation), foil thickness, mechanical properties and morphology [14]. These are due to the high electron density and the high thermal conductivity of the carbon layers.…”

Section: Introductionmentioning

confidence: 99%

Raman investigation of laser-induced structural defects of graphite oxide films

Romano

Torrisi

Cutroneo

et al. 2018

EPJ Web of Conferences

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Abstract. Since the beginning of intensive studies on graphene and graphitic materials, Raman spectroscopy has always been used as a characterisation technique. This is due to two main reasons: the non-destructive nature of this experimental technique and its ability to distinguish between the plethora of existing carbon materials. One of the most challenging research activities concerns the production of graphene microcircuits. To address this issue, a possible strategy is to directly reduce and pattern graphite oxide (GO) film by laser irradiation. The objective of this study is to evaluate the laser irradiation-induced structural changes on thin GO films by using Micro-Raman spectroscopy.We used as a source a Nd:YAG laser (1064 nm) and different laser fluences: 15 J/cm 2 , 7.5 J/cm 2 and 5 J/cm 2 . We have analyzed the modifications of the main Raman contributions of these graphitic materials: the D band (defect induced band), the G band (band due to sp 2 hybridized carbon atoms) and the 2D band (D band overtone). In particular, we found out that our figure of merit (FOM) parameters, i.e. the intensity ratio I D /I G (for the D band and G band) and I 2D /I G (for the 2D band and G band), change with the laser fluences, revealing a different effect induced by the laser irradiation. The best results are found in the sample irradiated with 5 J/cm 2 , suggesting that higher fluences do not lead to better results.

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Graphene Produced by Radiation-Induced Reduction of Graphene Oxide

Cited by 107 publications

References 23 publications

Identification of functional groups and determination of carboxyl formation temperature in graphene oxide using the XPS O 1s spectrum

Identification of functional groups and determination of carboxyl formation temperature in graphene oxide using the XPS O 1s spectrum

Synthetic routes contaminate graphene materials with a whole spectrum of unanticipated metallic elements

Raman investigation of laser-induced structural defects of graphite oxide films

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