Graphene photodetector integrated on silicon nitride waveguide

Wang, Jiaqi; Cheng, Zhenzhou; Chen, Zefeng; Xu, Jianbin; Tsang, Hon Ki; Shu, Chester

doi:10.1063/1.4917378

Cited by 50 publications

(38 citation statements)

References 31 publications

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“…For SiN-based PICs, silicon can potentially be used for integrated photodiodes for visible/near-IR wavelengths. At telecom wavelengths, a first graphene-based photo-detector has been reported for SiNbased PICs [109]. To overcome this lack of high speed photodiode in SiN, it can be combined with SOI whereby there is access to high speed germanium photodiodes [80].…”

Section: F Pockels Effect and High-speed Functionsmentioning

confidence: 99%

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Rahim

Ryckeboer

Subramanian

et al. 2017

J. Lightwave Technol.

267

158

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Abstract-The high index contrast silicon-on-insulator platform is the dominant CMOS 1 compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-oninsulator has some drawbacks for these emerging applications, e.g. silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms.

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Section: F Pockels Effect and High-speed Functionsmentioning

confidence: 99%

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Rahim

Ryckeboer

Subramanian

et al. 2017

J. Lightwave Technol.

267

158

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“…performance photodetectors) cannot be grown, leaving graphene as the currently only SiN-compatible material that has the potential to enable high-speed photodetection [9].…”

mentioning

confidence: 99%

Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

et al. 2016

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Photodetectors convert light into electrical signals and are at the heart of any optical link. In silicon photonics, traditionally germanium (Ge) [1,2] or III-V compound semiconductors [3,4] are used for photodetection and both technologies have reached a high level of maturity. Nevertheless, the direct monolithic integration of III-V photodetectors on Si wafers remains a challenge because of the large lattice constant mismatch and different thermal coefficients. Ge can be directly grown on crystalline Si, but pushing the bandwidth of Ge photodetectors to higher and higher frequencies [5,6,7] becomes increasingly difficult because of the material's poor electrical quality. One of the most promising routes to a new era of chip performance is the monolithic 3D integration of electronic and photonic components on the same chip, where a promising material for the photonic layers is SiN [8]. On these amorphous SiN layers, crystalline Ge (the prerequisite for realizing high

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“…For example, silicon nitride is a large bandgap (∼5 eV) deposited material that is compatible with CMOS fabrication technology. Wang et al [56] demonstrated the broadband graphene photodetector integrated on the silicon nitride waveguide. The two electrodes were set asymmetrically along the waveguide.…”

Section: Waveguide-integrated Graphene Photodetectorsmentioning

confidence: 99%

Progress on Waveguide-Integrated Graphene Optoelectronics

Wang

Cheng

2018

Advances in Condensed Matter Physics

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Graphene, a single layer of carbon atoms arranged in the form of hexagonal lattice, has many intriguing optical and electrical properties. However, due to the atomic layer thickness, light-matter interactions in the monolayer graphene are naturally weak when the light is normally incident to the material. To overcome this challenge, waveguide-integrated graphene optoelectronic devices have been proposed and demonstrated. In such coplanar configurations, the propagating light in the waveguide can significantly interact with the graphene layer integrated on the surface of the waveguide. The combination of photonic integrated circuits and graphene also enables the development of graphene devices by using silicon photonic technology, which greatly extends the scope of graphene's application. Moreover, the waveguide-integrated graphene devices are fully CMOS-compatible, which makes it possible to achieve low-cost and high-density integration in the future. As a result, the area has been attracting more and more attention in recent years. In this paper, we introduce basic principles and research advances of waveguide-integrated graphene optoelectronics.

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Graphene photodetector integrated on silicon nitride waveguide

Cited by 50 publications

References 31 publications

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

Progress on Waveguide-Integrated Graphene Optoelectronics

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