Graphene p–n Vertical Tunneling Diodes

Kim, Sungeun; Shin, Dong Hwa; Kim, Chang Oh; Kang, Soo Seok; Kim, Jong Min; Jang, Chan Wook; Joo, Soong Sin; Lee, Jae Sung; Kim, Woo Jung; Choi, Suk‐Ho; Hwang, E. H.

doi:10.1021/nn400899v

Cited by 67 publications

(51 citation statements)

References 33 publications

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“…These anomalous I-V properties were attributed to actual formation of a structure like metalinsulator-metal/metal-semiconductor-metal diode due to strongly corrugated insulating or semiconducting interlayers formed between the metallic p-and n-graphene sheets at higher n-doping concentrations (see Fig. 1b) and well explained based on the band structures of biased p-n junctions 15 ( Supplementary Fig. 2).…”

Section: Resultsmentioning

confidence: 79%

“…The devices were named as D1BD5 when t D in the BV exposure was 0.5, 1, 2, 3 and 4 min, respectively. The t D -dependent properties of the n-and p-graphene layers were analysed in detail 15 by using various structural, optical and electrical detection techniques 16 . Figure 1a shows a schematic of a typical graphene p-n vertical tunnelling junction for photodetection.…”

Section: Resultsmentioning

confidence: 99%

“…Positive voltages were applied to the Ag electrode on p-graphene layer under forward bias. The dark current (DC)-voltage (I-V) curves are symmetric and linear in the forward/reverse directions with respect to zero voltage for D1-D3 devices, indicating no rectifying behaviours at the p-n junctions because of the negligible barrier at the boundary 15 . The I-V characteristics of these devices are almost not varied even under illumination at various photon wavelengths from 300 to 1,000 nm, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The rectifying behaviour of the DC can be understood from the available density of states for tunnelling between p-and n-type graphene 15 ( Supplementary Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

“…The PD structures permit a large PC flow by the tunnelling of charge carriers through the interlayer formed between the p-and ngraphene layers at higher n-doping concentrations 15 .…”

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confidence: 99%

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High photoresponsivity in an all-graphene p–n vertical junction photodetector

et al. 2014

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Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report highefficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n vertical-type tunnelling diodes. The observed photodetector characteristics well follow what are expected from its band structure and the tunnelling of current through the interlayer between the metallic p-and n-graphene layers. High detectivity (B10 12 cm Hz 1/2 W À 1 ) and responsivity (0.4B1.0 A W À 1 ) are achieved in the broad spectral range from ultraviolet to near-infrared and the photoresponse is almost consistent under 6-month operations. The high photodetector performance of the graphene p-n vertical diodes can be understood by the high photocurrent gain and the carrier multiplication arising from impact ionization in graphene.

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The rectifying behaviour of the DC can be understood from the available density of states for tunnelling between p-and n-type graphene 15 ( Supplementary Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

“…The PD structures permit a large PC flow by the tunnelling of charge carriers through the interlayer formed between the p-and ngraphene layers at higher n-doping concentrations 15 .…”

mentioning

confidence: 99%

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High photoresponsivity in an all-graphene p–n vertical junction photodetector

et al. 2014

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Gate‐Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures

Iqbal

Siddique²,

Khan³

et al. 2018

Adv Eng Mater

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Combining with layered thin crystalline films, graphene has expanded its application scope beyond the regime where a gapless semimetal cannot serve. Here, we report the modulation of tunneling characteristics in graphene/hexagonal boron nitride (hBN) vertical heterostructure at different interlayer hBN thickness. These results signify an upshift in threshold voltages with hBN layer thickness. Furthermore, the gate‐dependent tunneling characteristics of the device has been demonstrated. The back‐gate voltages are used to adjust the fermi level of bottom graphene layer, which in turns tune the threshold voltages and tunneling current through ultrathin hBN layer. Our findings offer an effective tool to modulate the tunneling characteristics of vertical transistors for their potential applications in high frequency logic and tunnel devices.

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Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

Tian

Tang

Teng

et al. 2019

Adv Materials Technologies

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Graphene has been widely used as electrodes and active layers in optoelectronics due to its diverse excellent performances, such as high mobility, large thermal conductivity and high specific surface area etc. Methodology for constructing p-n junction has becoming an important consideration in improving the performance of optoelectronic devices and broadening of its application in related fields. Currently, graphene based p-n junction has been explored and different structures have also been investigated. This review paper summaries the recent progress on graphene homogeneous p-n junction, ranging from preparation of front-end materials (e.g. p-and n-type graphene) to building of planar and vertical p-n junctions. Furthermore, p-n junction via electrical modulation is described. The requirements for building the graphene homogeneous p-n junction, and the advantages and drawbacks of the different structures of the p-n junction are also discussed. Finally, a preferential technique to fabricate high performance p-and n-type graphene and building of the p-n junction is evaluated. This paper therefore provides an important indication on the future direction on the application of graphene in optoelectronics. 2 ranging applications, such as logical rectifier circuit [10,11] , field-effect optoelectronic transistor [12-14] , multimode non-volatile memory [15] , rectifier memory [16,17] , optoelectronic storage [18,19] , photovoltaic device [20] , photodetector [21,22] and gas sensor [23,24] etc. Consequently, it is obvious to study new material system for the p-n junction that will enhance the performance of current devices and also lead to the development of new devices. In general, p-n junction can be categorized into heterojunction and homojunction. If same materials are used, the p-n junction is known as homogeneous junction or homojunction. There are many advantages of homogeneous p-n junction, for example, there is no issue on lattice mismatch, which will result in surface defects, since p and n layers are of the same materials. Moreover, the use of the same materials in homogeneous p-n junction leads to uniform energy band gap across the device structure, as shown in Figure 1a. Depletion region is formed at the junction between p and n regions, and the alignment of Fermi level (E f) promotes band bending at the depletion region when the same semiconducting materials are used to construct the p-n junction, as represented in Figure 1b. Such homogeneous p-n junction is of great significance in the field of optoelectronics. Figure 1c illustrates the charge transport mechanism under illumination. Upon radiation of light with certain wavelength (hυ ≧ Eg), electrons jump to conduction band in p, n and depletion regions. These electrons and holes arriving at the depletion region are subsequently swept into n-type and p-type regions respectively via the built-in field. As a result, current is generated and a certain voltage is produced due to the accumulation of charges under open circuit conditions. Furthermore, this lead...

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Graphene p–n Vertical Tunneling Diodes

Cited by 67 publications

References 33 publications

High photoresponsivity in an all-graphene p–n vertical junction photodetector

High photoresponsivity in an all-graphene p–n vertical junction photodetector

Gate‐Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures

Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

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